A method for reworking low square resistance silicon wafer after diffusion

Abstract

The invention discloses a low square resistance silicon chip reworking method after diffusion. The method comprises steps that: silicon chips to be reworked are placed in a diffusion furnace; protection gas is injected into the diffusion furnace; under the temperature of 650-740 DEG C, insulation treatment on the silicon chips to be reworked is carried out; and furnace outgoing operation of the silicon chips to be reworked is carried out. By employing the reworking method, reworking of the silicon chips having square resistance lower than a normal value is carried out to enable the square resistance to rise to a normal value. The method is advantaged in that: steps are simplified, operation technology is simple, reworking efficiency of the silicon chips having low square resistance can be substantially improved, and photoelectric conversion efficiency of subsequently-manufactured solar cells can further be substantially improved.

Description

technical field [0001] The invention belongs to the field of solar cell manufacturing, and in particular relates to a method for reworking low square resistance silicon wafers after diffusion. Background technique [0002] In crystalline silicon solar cells, the quality of the P-N junction directly affects the performance of the solar cell. Therefore, in the solar cell manufacturing process, the manufacture of the P-N junction has always been the focus of production. Diffusion junction plays a key role in the conversion efficiency of solar cells, and the diffusion process directly affects the quality of the P-N junction. [0003] In the process of preparing the P-N junction by diffusion, when the diffusion process is abnormal, the square resistance of the silicon wafer may be too small, resulting in a decrease in the photoelectric conversion efficiency of the subsequently prepared solar cell. Therefore, silicon wafers with too low resistance after diffusion can basically n...

AI Technical Summary

Problems solved by technology

[0005] In order to solve the problem in the prior art that when the square resistance of the silicon wafer is low due to the abnormal diffusion process, it is necessary to rework from the texturing process, resulting in complex process, long cycle and high cost. A rework method for improving the square resistance of silicon wafers directly through diffusion

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