A kind of solar cell and its manufacturing method

Abstract

The invention provides a method for manufacturing a solar cell, comprising: forming a textured structure on the surface of a silicon substrate, the electrode area on the front side of the silicon substrate includes a central area and two side areas; forming a second electrode in at least part of the central area A heavily doped region, a second heavily doped region is formed in part of the regions on both sides, and a lightly doped region is formed in other regions, the doping concentration of the first heavily doped region is greater than or equal to the second heavily doped region doping concentration; or form a first heavily doped region in at least part of the central region, form a second heavily doped region in all regions on both sides, and form a lightly doped region in other regions, the first The doping concentration of the heavily doped region is greater than that of the second heavily doped region; an antireflection layer, a front electrode and a back electrode are formed. The invention also provides a solar cell. The implementation of the invention can reduce the surface recombination of the battery and improve the conversion efficiency of the battery.

Description

technical field [0001] The invention relates to the field of photovoltaic technology, in particular to a solar cell and a manufacturing method thereof. Background technique [0002] In the manufacturing process of high-efficiency solar cells, in order to achieve good contact between the electrodes and the silicon wafer, the electrodes are often prepared on a specific area of ​​the silicon wafer by screen printing. For example, Selective Emitter Solar Cell (hereinafter referred to as SE battery), passivated emitter back local diffusion battery (Passivated Emitter and Rear Locally-diffused, hereinafter referred to as PERL battery), passivated emitter all Passivated Emitter and Rear Total-diffused (hereinafter referred to as PERT battery). [0003] The SE cell includes a silicon substrate, an anti-reflection layer, a front electrode and a back electrode. The anti-reflection layer is arranged on the front side of the silicon substrate, the front electrode forms ohmic contact w...

AI Technical Summary

Problems solved by technology

Specifically, due to the relatively large width of the electrode region, most of the region in the electrode region is not covered by the electrode after the electrode is formed in the electrode region, and this part of the region not covered by the electrode is heavily doped, so This leads to serious recombination in this part of the area, which leads to the reduction of battery performance and restricts the improvement of battery efficiency.

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