Diffusion method for silicon wafer and photovoltaic silicon wafer

A diffusion method and silicon wafer technology, applied in diffusion/doping, chemical instruments and methods, crystal growth, etc., can solve the problem that the attenuation rate of battery efficiency needs to be reduced, the light conversion efficiency of the battery needs to be improved, and it is difficult to further improve the inside of the silicon wafer Doping concentration and other issues
CN114497283APending Publication Date: 2022-05-13TONGWEI SOLAR (ANHUI) CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
TONGWEI SOLAR (ANHUI) CO LTD
Publication Date
2022-05-13

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Abstract

The embodiment of the invention provides a diffusion method for a silicon wafer and a photovoltaic silicon wafer, and relates to the field of photovoltaic cells. The diffusion method for the silicon wafer comprises the following steps of: performing primary deposition treatment on the pretreated silicon wafer at the temperature of 700-780 DEG C, and then performing secondary deposition treatment at the temperature of 720-800 DEG C, the temperature of the secondary deposition treatment being higher than the temperature of the primary deposition treatment; carrying out primary junction pushing treatment on the silicon wafer at the temperature of 800-840 DEG C; carrying out secondary junction pushing treatment on the silicon wafer at the temperature of 840-880 DEG C; the temperature of the primary junction pushing treatment is higher than the temperature of the secondary deposition and lower than the temperature of the secondary junction pushing treatment. The photovoltaic silicon wafer obtained by using the diffusion method is low in surface doping concentration, high and uniform in internal doping concentration, small in surface recombination effect and long in minority carrier service life, and when the photovoltaic silicon wafer is used for a solar cell, a solar cell with high light conversion efficiency can be obtained.
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Description

technical field

[0001] The present application relates to the field of photovoltaic cells, in particular, to a diffusion method for silicon wafers and photovoltaic silicon wafers. Background technique

[0002] In crystalline silicon solar cells, silicon wafers need to be diffused to reduce the surface doping concentration of silicon wafers and increase the internal doping concentration of silicon wafers, thereby improving the light conversion efficiency of the cell and reducing the attenuation rate of the cell.

[0003] The current diffusion method cannot reduce the surface doping concentration of the silicon wafer very well, and it is also difficult to further increase the internal doping concentration of the silicon wafer. The light conversion efficiency of the cell still needs to be improved, and the attenuation rate of the cell efficiency still needs to be reduced. Contents of the invention

[0004] The purpose of the embodiments of the present application is to provid...

Claims

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