A kind of phosphorus diffusion method of silicon crystal sheet

A silicon crystal and phosphorus diffusion technology, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, final product manufacturing, etc., can solve problems such as weakened contact between silver paste and silicon wafers, research bottlenecks, and reduced fill factor, etc., to achieve optoelectronics Improve the conversion efficiency, improve the short-wave effect, and improve the fill factor effect

Active Publication Date: 2021-03-05
ZHEJIANG AIKO SOLAR ENERGY TECH CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The direct consequence of this is that the optimization of fill factor and open circuit voltage will restrict each other; that is, reducing the surface doping concentration can increase the open circuit voltage, but it will cause the contact between the silver paste and the silicon wafer to weaken, reducing the fill factor; When the surface doping concentration increases, the fill factor increases and the open circuit voltage decreases.
The mutual restriction between the open circuit voltage and the fill factor makes the study of adjusting the doping amount to improve the overall electrical performance of the battery encounter a bottleneck

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0054] Phosphorus diffusion method for silicon crystal wafers:

[0055] (1) Put the silicon wafer to be processed into a diffusion furnace and raise the temperature to 760°C; during the heating process, oxygen is introduced, and the oxygen flow rate is 0.5slm;

[0056] (2) At a constant temperature of 760°C, nitrogen, oxygen, and large nitrogen carrying phosphorus sources are passed into the diffusion furnace for the first deposition; among them, the phosphorus source flow rate is 390 mg / min; the maximum nitrogen flow rate is 450 sccm; the oxygen flow rate is 450 sccm; The pressure in the diffusion furnace is 30mbar; the deposition time is 5 minutes;

[0057] (3) The temperature in the diffusion furnace is raised to 790°C; nitrogen, oxygen, and large nitrogen are fed into the phosphorus source to carry out the second deposition; wherein, the flow rate of the phosphorus source is 390 mg / min; the maximum nitrogen flow rate is 450 sccm; the oxygen flow rate is 450sccm; the press...

Embodiment 2

[0064] Phosphorus diffusion method for silicon crystal wafers:

[0065] (1) Put the silicon wafer to be processed into a diffusion furnace and raise the temperature to 785°C; during the heating process, oxygen is introduced, and the oxygen flow rate is 0.8slm;

[0066] (2) At a constant temperature of 785°C, nitrogen, oxygen, and large nitrogen carrying phosphorus sources are introduced into the diffusion furnace for the first deposition; among them, the phosphorus source flow rate is 410 mg / min; the maximum nitrogen flow rate is 500 sccm; the oxygen flow rate is 500 sccm; The pressure in the diffusion furnace is 60mbar; the deposition time is 8 minutes;

[0067] (3) The temperature in the diffusion furnace is raised to 800°C; nitrogen, oxygen, and large nitrogen are fed into the phosphorus source to carry out the second deposition; wherein, the flow rate of the phosphorus source is 410 mg / min; the maximum nitrogen flow rate is 500 sccm; the oxygen flow rate is 500sccm; the p...

Embodiment 3

[0074] Phosphorus diffusion method for silicon crystal wafers:

[0075] (1) Put the silicon wafer to be processed into a diffusion furnace and raise the temperature to 780°C; during the heating process, oxygen is introduced, and the oxygen flow rate is 0.7slm;

[0076] (2) At a constant temperature of 780°C, nitrogen, oxygen, and large nitrogen carrying phosphorus sources are introduced into the diffusion furnace for the first deposition; among them, the phosphorus source flow rate is 405 mg / min; the maximum nitrogen flow rate is 490 sccm; the oxygen flow rate is 490 sccm; The pressure in the diffusion furnace is 45mbar; the deposition time is 7 minutes;

[0077] (3) The temperature in the diffusion furnace is raised to 795°C; nitrogen, oxygen, and large nitrogen are introduced into the phosphorus source to carry out the second deposition; wherein, the flow rate of the phosphorus source is 400 mg / min; the maximum flow rate of nitrogen is 460 sccm; the flow rate of oxygen is 4...

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Abstract

The invention discloses a phosphorus diffusion method on a silicon crystal sheet, which includes temperature rise oxidation, primary deposition, secondary deposition, aerobic propulsion, anaerobic propulsion, three depositions, temperature reduction and laser heavy doping; the process in the present invention is effectively improved The square resistance of the silicon crystal sheet is reduced, the surface doping concentration is reduced, the short-circuit current is increased, and the open-circuit voltage is increased; the performance of the battery is optimized. The square resistance of the silicon crystal sheet in the present invention can reach 105-125Ω / sq, and the junction depth is 0.3-0.6 μm; the photoelectric conversion efficiency of the solar cell made of the silicon crystal sheet in the present invention is increased by 0.1-0.15%. .

Description

technical field [0001] The invention relates to the field of solar cell preparation, in particular to a phosphorus diffusion method on a silicon crystal sheet. Background technique [0002] Silicon solar cells have stable performance, mature production technology, and reasonable cost, and have long occupied a dominant position in the photovoltaic industry. At present, the conventional production process of crystalline silicon solar cells is to start from crystalline silicon wafers and carry out texturing, diffusion, etching and cleaning, coating, and silk screen sintering. The diffusion of crystalline silicon wafer (usually tubular phosphorus diffusion junction) step is a key step in the preparation of solar cells, which determines the surface doping concentration, junction depth and effective doping amount of the silicon wafer, thus affecting the electrical performance of the battery. have an important impact. Among them, the surface doping concentration will directly aff...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L21/223H01L21/268H01L31/0224
CPCH01L21/223H01L21/268H01L31/022425H01L31/1804Y02E10/547Y02P70/50
Inventor 韩大伟方结彬林纲正何达能陈刚
Owner ZHEJIANG AIKO SOLAR ENERGY TECH CO LTD
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