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A uniform diffusion control method for crystalline silicon solar cells

A solar cell, uniform diffusion technology, applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems of increasing the resistance of the moving current to the electrode of the grid line, the inability of the emitter to take into account at the same time, and the increase of the emitter resistance, etc., to reduce the surface Defects, improved life, and improved open-circuit voltage

Active Publication Date: 2015-11-18
山东力诺太阳能电力股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, the emitter made by the conventional diffusion method cannot meet the above two requirements at the same time
Generally, if the doping concentration is not too high, the Auger recombination will be greatly increased, and the minority carriers formed in the emission region are easy to recombine, resulting in a decrease in short-wave response; if the surface concentration is reduced, the junction depth will also become shallower, thin layer The resistance is high, and the resistance of the emitter must increase, thereby increasing the resistance of the current moving to the grid electrode in the emission area, increasing the probability of PN junction burn-through in the subsequent electrode sintering process, and reducing the battery yield.

Method used

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  • A uniform diffusion control method for crystalline silicon solar cells
  • A uniform diffusion control method for crystalline silicon solar cells

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] Select a single crystal silicon wafer; silicon wafer 1 undergoes a conventional cleaning process and texturing, puts silicon wafer 1 into a diffusion furnace, heats up to 805°C, and feeds large nitrogen (8L / min) and small nitrogen (1.5L / min) min), oxygen (0.8L / min) diffused for 12 minutes, and after the temperature was raised to 860 ° C, the diffusion junction was advanced for 5 minutes; the diffused silicon wafer was subjected to peripheral etching and phosphorus silicon glass removal; the obtained silicon wafer 1 was then placed in an oxidation furnace, Feed big nitrogen (7L / min), keep the temperature at 860°C for 5min. The square resistance of the silicon wafer obtained in Example 1 of the present invention is compared with the uniformity of the square resistance of the silicon wafer of the prior art, and the results are as follows:

[0022] .

Embodiment 2

[0024] Select a quasi-single crystal silicon wafer; silicon wafer 1 undergoes a conventional cleaning process and texturing, puts silicon wafer 1 into a diffusion furnace, heats up to 785°C, and feeds large nitrogen (6.5L / min), small nitrogen (1L / min), oxygen (0.25L / min) diffused for 15min, and after the temperature was raised to 830°C, the diffusion junction was advanced for 15min; the diffused silicon wafer 1 was placed in 5% hydrofluoric acid, and the reaction time was 50s; the obtained silicon wafer 1 Then put it into the oxidation furnace, feed large amount of nitrogen (7L / min), keep the temperature at 820°C for 10min. Comparing the battery sheet obtained in Example 2 of the present invention with the battery sheet of the prior art, the results are as follows:

[0025] .

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Abstract

The invention relates to a homogeneous diffusion section preparation method for a crystalline silicon solar cell. The homogeneous diffusion section preparation method comprises the following steps of: 1) manufacturing an emitter on the surface of the felted silicon chip; 2) performing phosphorosilicate glass removal on the silicon chip obtained in the step 1 by employing an HF acid solution; and 3) performing high temperature annealing on the surface of the surface of the silicon chip obtained in the step 2. The concentration of the surface of the silicon chip is reduced, so that the surface recombination and defect concentration is reduced, the micro-defect and impurity ions in the silicon chip are reduced due to high temperature annealing, and the minority carrier life time is prolonged; and meanwhile, a PN junction area is widened, so that the open-circuit voltage is improved. The battery conversion efficiency can be effectively improved, and the uniformity of the diffusion sheet resistance can be improved.

Description

technical field [0001] The invention relates to the technical field of solar cell production, in particular to a uniform diffusion control method for crystalline silicon solar cells. Background technique [0002] Among all kinds of solar cells, crystalline silicon cells have always occupied the most important position. In recent years, great achievements and progress have been made in improving efficiency and reducing cost of crystalline silicon solar cells, further enhancing its dominant position in the future photovoltaic industry. [0003] As the core component of the solar cell, the emitter's surface doping concentration will directly affect the conversion efficiency of the solar cell. Solar cells have two requirements for the emitter: 1. The doping concentration should not be too high, and 2. The surface concentration should not be too low. [0004] At present, the emitter made by the conventional diffusion method cannot meet the above two requirements at the same tim...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCY02P70/521Y02P70/50
Inventor 任现坤李秉霖姜言森张春艳程亮贾河顺徐振华
Owner 山东力诺太阳能电力股份有限公司
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