Cuprous sulfide nano ring structure semiconductor material and preparation method thereof

Abstract

The invention discloses a cuprous sulfide micron ring structure semiconductor material comprising a hierarchical structure consisting of sheets and a porous ring structure consisting of particles. The invention also discloses a preparation method of the cuprous sulfide micron ring structure semiconductor material, and the preparation method comprises the steps of mixing anhydrous ethanol with deionized water to prepare a mixed solution, preparing a thiourea solution and a CuCl solution respectively, and uniformly mixing; adding the mixture into a reaction kettle, sealing the kettle, reacting for 5 hours at 150 DEG C; after the reaction, putting the reactant on a silicon chip, and baking at 55 DEG C to obtain the cuprous sulfide micron ring structure semiconductor material. The cuprous sulfide micron ring structure semiconductor material disclosed by the invention has the advantages of low cost, relatively low growth temperature and relatively high repeatability, and has great potential in the aspects of photo-catalysis of industrial polluted wastewater and field emission luminescence.

Description

technical field [0001] The invention relates to the technical field of optoelectronic materials, semiconductor materials and devices, in particular to a cuprous sulfide micron ring-structured semiconductor material and a preparation method thereof. Background technique [0002] Cu 2 S is a P-type narrow bandgap semiconductor material with a direct bandgap of 1.2eV and excellent electrical conductivity. Because of its unique electrical, chemical and optical properties, Cu 2 S has a wide range of research and applications in the fields of solar cells, photocatalysis, field emission, and sensors. Existing literature reports the preparation of one-dimensional and two-dimensional cuprous sulfide semiconductor materials, such as: nanoparticles, nanorods, nanowires, nanotubes, and nanocolored ribbons; three-dimensional nanostructures, such as: nanospheres, nanoflowers, etc., also was successfully prepared. However, the preparation of cyclic cuprous sulfide semiconductor materia...

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Problems solved by technology

However, its most important preparation method still has defects such as complexity, non-reproducibility and high cost, which limit its application in large-scale industrial production.

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