Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A laser direct writing system and lithography method

A technology of laser direct writing and exposure system, which is applied in the field of laser lithography, can solve problems such as inability to meet high-speed writing, and achieve the effects of fast focusing response speed, small mechanism adjustment amount, and fast focusing speed

Active Publication Date: 2015-10-28
SVG TECH GRP CO LTD
View PDF10 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Solve the problem that the focal length control of the existing laser direct writing system cannot meet the needs of high-speed writing, and improve the overall performance of the laser direct writing system

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A laser direct writing system and lithography method
  • A laser direct writing system and lithography method
  • A laser direct writing system and lithography method

Examples

Experimental program
Comparison scheme
Effect test

no. 1 approach

[0068] Compared with the first embodiment, in the second embodiment, the measurement optical path 110' only needs to consider the distribution of the two beams of incident light and reflected light, so the setting of optical lenses in the optical path can be saved. As shown in the figure, it can Only one half mirror 112' is used.

[0069] The exposure system 20' also includes a second light source 201', a pattern generator 202' and an exposure light path 210'. The incident light emitted by the second light source 201' passes through the pattern generator 202', the exposure light path 210', and is incident from the exposure objective lens 211. To form an exposure pattern on the surface of the object to be engraved.

[0070] In this second embodiment, the central controller used to control the mechanical movement of each component can be the same, such as Figure 4 As shown in , it is also possible to separately set up a central controller separately, and then exchange data bet...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a laser direct-writing system and a photolithography method. The laser direct-writing system comprises a focal length measurement system and an exposure system, wherein the focal length measurement system adopts an offline way to measure the three-dimensional shape information of the surface of a whole object to be etched, then converts the three-dimensional shape information into focusing information and sends the focusing information to the exposure system; according to the focusing information, in the process that the surface of the object to be etched is photoetched, the exposure system regulates the focal length so as to suit the concave and convex degree of the surface of the object to be etched, and an exposure point always focuses on the surface of the photoetched object.

Description

technical field [0001] The patent of the invention relates to the field of laser lithography, especially a laser direct writing system and method with three-dimensional navigation and focusing functions, which can be used for precision mask manufacturing, micro-electromechanical system device manufacturing, semiconductor maskless lithography, large-format micro-nano Graphics manufacturing and other fields. Background technique [0002] Laser direct writing lithography is an emerging maskless micro-nano processing method. It is widely used in the fields of mask manufacturing, semiconductor device manufacturing and micro-nano pattern making. The substrate processed by laser direct writing may be a relatively flat wafer, a mask, or a sapphire substrate with poor flatness, or even a deformable material coated with photoresist such as plexiglass. [0003] Existing laser direct writing systems generally have a focal length control module. For example: Chinese patent application...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/207G03F7/20
Inventor 朱鹏飞浦东林胡进陈林森朱鸣魏国军
Owner SVG TECH GRP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com