A kind of semiconductor laser for Raman spectrum measurement

Abstract

The invention discloses a semiconductor laser unit for measuring Raman spectra. The semiconductor laser unit comprises a luminous power stabilization system, a cat eye system, a first interference filter, a second interference filter, a first collimation lens, a cone-shaped amplifier, a laser shaping system, a bottom plate and a current temperature control module. The cat eye system, the first interference filter, the second interference filter, the first collimation lens, the cone-shaped amplifier and the laser shaping system are sequentially installed on the bottom plate. The current temperature control module is connected with the cone-shaped amplifier. Lasers output by the rear end face of the cone-shaped amplifier outputs round light spots after passing through the laser shaping system. The semiconductor laser unit is of a linear cavity structure and can obtain stable high power output.

Description

technical field [0001] The invention relates to a semiconductor laser, in particular to a semiconductor laser suitable for Raman spectrum measurement. Background technique [0002] Raman spectroscopy is a light scattering technique. Spectral signals generated by the interaction of light and chemical bonds in materials can provide detailed information on sample chemical structure, phase and morphology, crystallinity, and molecular rotation and vibration. High, wide detection range, small interference, etc., is an effective means of material structure analysis and testing. Raman scattering was discovered by Indian physicist C.V.Raman in 1928. Unlike Rayleigh scattering, Raman scattering is an inelastic scattering. When a monochromatic beam of incident light photons interact with molecules, energy exchange occurs. Photons not only Change the direction of motion, and at the same time transfer a part of the energy to the molecule, or transfer the vibration and rotation energy of...

AI Technical Summary

Problems solved by technology

At present, most of the commonly used lasers in the 785nm band are semiconductor lasers, which have the advantages of high efficiency, small size, long life, and low price. However, high-power semiconductor laser devices often have poor transverse mode characteristics, poor spectral quality, and large wavelength changes with current and temperature. Therefore, how to overcome the above problems to achieve high power, narrow linewidth, and semiconductor laser output with good spot quality has become a research direction in recent years.

Images