CMOS radio frequency power amplifier

Abstract

The invention discloses a CMOS radio frequency power amplifier. The CMOS radio frequency power amplifier comprises an MOS transistor and a bipolar transistor. A biasing circuit of the MOS transistor enables the MOS transistor to work at a saturation region, and a biasing circuit of the bipolar transistor is regulated to enable the absolute value of the third-order nonlinear coefficient of the bias current of a collecting electrode of the bipolar transistor to get close to the absolute value of the third-order nonlinear coefficient of the bias current of each of a source electrode and a drain electrode. Because the plus and minus of the third-order nonlinear coefficients of two transistors are opposite, the third-order nonlinear coefficients of the transistors can be counteracted in the best effect, the third-order cut-off point number of the CMOS radio frequency power amplifier is increased, the linearity of the amplifier is improved, the gain performance and the noise performance of the amplifier are improved, and the overall function of the amplifier is improved and optimized.

Description

Technical field [0001] The invention relates to a semiconductor integrated circuit device, in particular to a CMOS radio frequency power amplifier. Background technique [0002] Traditional RF power amplifiers have a variety of linearization methods, such as feedforward, feedback and other methods. However, these existing methods have unsatisfactory linearization effects due to higher requirements on device quality, signal amplitude and phase control. An existing linearization circuit uses MOS transistors with different bias voltages to eliminate the third-order nonlinear term in order to improve the linearity of the third-order intercept point (IP3), such as figure 1 As shown, it is a schematic diagram of the structure of an existing CMOS radio frequency power amplifier; the existing CMOS radio frequency power amplifier includes: a first NMOS transistor 101 and a second NMOS transistor 102, the two NMOS transistors 101 and 102 are both connected to form a common source amplifier...

AI Technical Summary

Problems solved by technology

However, this method has a limited degree of improvement in linearity, and there are also problems such as low gain, high noise, difficult design optimization, and sensitivity to process and temperature.

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