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non-volatile memory system

A memory system and non-volatile technology, applied in the field of memory, can solve the problem of high cost of non-volatile memory devices, and achieve the effects of reducing the number of components, circuit area and cost

Active Publication Date: 2017-12-08
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The present invention solves the problem of high cost of existing non-volatile memory devices

Method used

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Embodiment Construction

[0040] As described in the background art, in order to save the cost of the non-volatile storage device, flash memory is sometimes used instead of EEPROM to store a small amount of data, that is, only flash memory is used in the non-volatile storage device. However, since the operation of flash memory is much troublesome than that of EEPROM, this method does not have a great effect. In order to facilitate the operation of users, it is still widely used in the prior art. figure 1 The illustrated structure of the non-volatile memory device 10 stores data and programs. refer to figure 1 , the non-volatile storage device 10 includes a flash memory 11 and an EEPROM 12 .

[0041] Specifically, the flash memory 11 includes: a flash memory array 111, including a plurality of flash memory cells arranged in an array; a first row decoder 112, adapted to provide row decoding signals to the flash memory array 111; a first column decoder Encoder 113, adapted to provide column decoding sig...

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Abstract

A non-volatile memory system, including a flash memory array, a first row decoder, a first column decoder, a first reading circuit, a first control circuit, an EEPROM storage array, a second row decoder, a first The two-column decoder, the second readout circuit, and the second control circuit also include: a charge pump system adapted to supply the first row decoder, the first column decoder, the first readout The fetch circuit, the second row decoder, the second column decoder and the second read circuit provide operating voltages. The nonvolatile memory system provided by the invention has small circuit area, which reduces the cost of the nonvolatile memory system.

Description

technical field [0001] The invention relates to the technical field of memory, in particular to a nonvolatile memory system. Background technique [0002] Non-volatile memory (NVM, Non-volatile Memory) refers to a memory whose stored data will not disappear after power failure. According to whether the stored data can be rewritten to the standard at any time when used in a computer, non-volatile memory can be divided into two categories: read-only memory (ROM, Read Only Memory) and flash memory (Flash Memory). [0003] Electrically Erasable Programmable Read-Only Memory (EEPROM, Electrically Erasable Programmable Read-Only Memory) is a semiconductor storage device with a byte as the minimum unit of modification, which can be electronically rewritten multiple times. Compared with Erasable Programmable Read-Only Memory (EPROM, Erasable Programmable Read-Only Memory), EEPROM does not need to be irradiated with ultraviolet rays or removed, and a specific voltage can be used to ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/10
Inventor 杨光军
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP