Novel thermoelectric semiconductor device manufacturing method capable of separating cold end and hot end

Abstract

The invention provides a novel thermoelectric semiconductor device manufacturing method capable of dividing a cold end and a hot end of a traditional thermoelectric semiconductor device into a refrigerating module and a heating module. The cold end module consists of a fixation sheet (17), a conducting sheet (18), an N-type thermoelectric semiconductor component (19), and a P-type thermoelectric semiconductor component (20), the hot end module consists of a fixation sheet (12), a conducting sheet (13), an N-type thermoelectric semiconductor component (14), and a P-type thermoelectric semiconductor component (15), and the corresponding thermoelectric semiconductor components of the cold end and hot end modules are connected by using wiring harnesses (16) to form a novel thermoelectric semiconductor device with a separated heat conduction physical structure and complete electrical performances between the cold end and the hot end.

Description

technical field [0001] The invention relates to the manufacturing technology of a novel thermoelectric semiconductor device. Background technique [0002] For the basic structure of traditional thermoelectric semiconductor devices, see figure 1 , consisting of N-type thermoelectric semiconductor elements (1) and P-type thermoelectric semiconductor elements (2), through conductors (3) and (4), the N-type and P-type thermoelectric semiconductor elements are electrically connected in series to form a common refrigeration thermopile , A thermopile composed of a pair of N-type and P-type thermoelectric semiconductor elements is usually called a pair of thermocouples. [0003] according to figure 1 After the polarity is connected to the DC power supply, the current direction flows from the N-type thermoelectric semiconductor element (1) to the P-type thermoelectric semiconductor element (2), and the temperature at the joint surface of the P and N elements connected by the conduc...

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Problems solved by technology

[0006] Obviously, the internal heat exchange mechanism of thermoelectric semiconductor components limits the overall performance of thermoelectric semiconductor devices. Therefore, since the 1950s, efforts to improve the performance of thermoelectric semiconductor devices at home and abroad have basically been aimed at reducing the thermal conductivity of thermoelectric semiconductor materials. Expanded thermal conductivity, such as: adjusting material formula, adjusting material doping concentration, changing material unit cell structure, changing material grain size, changing material phonon scattering characteristics, adjusting carrier concentration, using nanomaterials, superlattice thin films Preparation technology, etc., but with little effect, can not substantially improve the poor performance caused by the internal heat conduction of thermoelectric semiconductor materials

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