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A method for semiconductor packaging by utilizing connection pieces to realize connection

A connecting sheet and semiconductor technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve the problems of increasing process complexity, affecting circuit performance, reducing production costs, etc., to achieve convenient and flexible production and facilitate heat dissipation , the effect of reducing production costs

Inactive Publication Date: 2014-05-28
ALPHA & OMEGA SEMICON INT LP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The above-mentioned prior art for chip packaging is to use wires for the connection between the chip and the lead frame, but in the packaging process of multiple chips connected by wires, the bonding and soldering reflow process usually make the chips prone to error. Movement, and due to the movement of the chip, a short circuit between the wires is caused at the same time, which affects the performance of the circuit. In addition, in the prior art, in order to increase the pins, cutting is performed at the bottom of the package, which has poor flexibility and increases the complexity of the process. , is not conducive to reducing production costs

Method used

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  • A method for semiconductor packaging by utilizing connection pieces to realize connection
  • A method for semiconductor packaging by utilizing connection pieces to realize connection
  • A method for semiconductor packaging by utilizing connection pieces to realize connection

Examples

Experimental program
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Effect test

Embodiment 1

[0088] Embodiment 1. A semiconductor package that is connected by a connecting piece, taking a low-side MOSFET device and a high-side MOSFET co-packaged device as an example, as Figure 2A , Figure 2B and Figure 2CAs shown, it includes first and second two chips, a substrate frame, a plurality of connecting pieces and a plastic package 170 for packaging all the above components; the two chips are respectively the first chip low-side metal-oxide-semiconductor field-effect transistor ( LS MOSFET) 110 and the second chip high-side metal oxide semiconductor field effect transistor (HS MOSFET) 120, the top contact regions of LS MOSFET 110 are gate contact region 111 and source contact region 112 respectively, and the bottom contact region is drain contact region (not shown in the figure), the top contact regions of the HS MOSFET 120 are the gate contact region 121 and the source contact region 122 respectively, and the bottom contact region thereof is the drain contact region (n...

Embodiment 2

[0092] Embodiment 2. A semiconductor package that is connected by a connecting piece, taking a low-side MOSFET device and a high-side MOSFET co-packaged device as an example, as Figure 8A , Figure 8B and Figure 8C As shown, it includes two chips, a substrate frame, a plurality of connecting sheets and a plastic package 270 for encapsulating all the above components; the two chips are the first chip low-side metal-oxide-semiconductor field-effect transistor (LS MOSFET) 210 and The top contact regions of the second chip high-side metal oxide semiconductor field effect transistor (HS MOSFET) 220 and LS MOSFET 210 are gate contact region 211 and source contact region 212 respectively, and their bottom contact regions are drain contact regions (not shown in the figure ), the top contact regions of the HS MOSFET 220 are the gate contact region 221 and the source contact region 222 respectively, and the bottom contact region is the drain contact region (not shown in the figure); ...

Embodiment 3

[0094] Embodiment 3. A semiconductor package that is connected by a connecting piece, taking a low-side MOSFET device and a high-side MOSFET co-packaged device as an example, as Figure 13A , Figure 13B and Figure 13CAs shown, it includes two chips, a substrate frame, a connecting sheet and a plastic package 370 for encapsulating all the above components; the two chips are respectively a low-side metal oxide semiconductor field effect transistor (LS MOSFET) 310 and a high-side metal oxide HS MOSFET 320, the top contact regions of LS MOSFET 310 are gate contact region 311 and source contact region 312 respectively, and the bottom contact region is drain contact region (not shown in the figure), the top contact region of HS MOSFET 320 The contact regions are gate contact region 321 and source contact region 322 respectively, and the bottom contact region is a drain contact region (not shown in the figure); a substrate frame, which includes a substrate frame first chip holder ...

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Abstract

The invention discloses a semiconductor package body in which inner connection is realized through connection pieces. The semiconductor package body comprises a plurality of chips, wherein each chip is provided with a plurality of top contact areas and bottom contact areas; a plurality of substrates which are used for placing the chips, the bottom contact areas of the chips being in electrical connection with the substrates, and the substrates being provided with a plurality of substrate outer pins; connection pieces, wherein the connection pieces are connected with the plurality of chips and are used for connecting with the plurality of top contact areas arranged corresponding to the plurality of chips, thereby fixing the plurality of chips, the end portions of the connection pieces being as the pins of the chips so as to connect with external circuits; and a plastic package body which is used for packaging the chips, the substrates and the connection pieces. During the production process of the semiconductor package body, the plurality of chips are fixedly connected by utilizing one or the plurality of connection pieces; then packaging is carried out; and at last, the connection pieces are separated through cutting or package body top grinding. Since the fixation connection effect of the connection pieces, the influence, due to malposition of the chips in the production process, on the circuit performance is prevented.

Description

technical field [0001] The invention relates to a semiconductor packaging structure and a manufacturing method, in particular to a semiconductor packaging and a manufacturing method thereof which are connected by connecting sheets. Background technique [0002] In order to meet the needs of miniaturization of electronic products, multi-chip semiconductor packaging has become a trend, and the semiconductor packaging of multi-chip modules carries multiple chips in a single package. [0003] For example, in the Chinese patent authorization announcement number CN201063342Y, a multi-chip packaging structure is disclosed, including: a first lead frame, including a first chip seat, a first inner pin and a second outer pin; a second lead frame, including a first Two chip seats and second inner pins; the second lead frame is located above or below the first lead frame, and the first lead frame is electrically connected to the second lead frame through the connector; the first chip is...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/50H01L21/60H01L21/56
CPCH01L2224/48091H01L2224/73265H01L2924/13091H01L2924/00014H01L2924/00H01L24/84H01L21/4871H01L21/78H01L2224/84365
Inventor 鲁军刘凯薛彦迅
Owner ALPHA & OMEGA SEMICON INT LP
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