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Copper-doped cadmium sulfide quantum dot sensitizer used for solar cell and manufacturing method

A solar cell and quantum dot sensitization technology, applied in the field of solar energy, to achieve the effects of improving short-circuit current and photoelectric conversion efficiency, rapid separation, and suppressing dark current

Inactive Publication Date: 2014-06-11
BEIJING INFORMATION SCI & TECH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the improvement of the short-circuit current of QDSSCs by using PbS-doped Cu as a sensitizer in PbS / CdS co-sensitized solar cells by the SILAR method has not been reported so far.

Method used

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  • Copper-doped cadmium sulfide quantum dot sensitizer used for solar cell and manufacturing method
  • Copper-doped cadmium sulfide quantum dot sensitizer used for solar cell and manufacturing method
  • Copper-doped cadmium sulfide quantum dot sensitizer used for solar cell and manufacturing method

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] The specific steps of the copper-doped lead sulfide quantum dot sensitizer for solar cells and the preparation method are:

[0030] 1) Equipped with Pb(NO at a concentration of 0.1M 3 ) 2 solution and Na 2 S solution, placed in a water bath at 20-50°C for 30-60min;

[0031] 2) CuCl 2 The solution is added to the Pb(NO 3 ) 2 In the solution, the atomic number ratio of Cu and Pb is 1:5;

[0032] 3) Put the solution obtained in step 2) into a water bath at 30°C for 30 minutes;

[0033] 4) The photoanode material TiO to be sensitized 2 Immerse in the solution prepared in step 3) for 1 min, take it out and dry it with nitrogen;

[0034] 5) Immerse the photoanode material obtained in step 4) into the Na prepared in step 2) 2 In the S solution for 1 min, take it out and dry it with nitrogen gas, and then form a Cu-doped PbS semiconductor quantum dot sensitizer layer on the photoanode material;

[0035] 6) Equipped with Cd(NO at a concentration of 0.1M 3 ) 2 solutio...

Embodiment 2

[0039] The specific steps of the copper-doped lead sulfide quantum dot sensitizer for solar cells and the preparation method are:

[0040] 1) Equipped with Pb(NO at a concentration of 0.1M 3 ) 2 solution and Na 2 S solution, placed in a water bath at 20-50°C for 30-60min;

[0041] 2) CuCl 2 The solution is added to the Pb(NO 3 ) 2 solution, in which Cu 2+ with Pb 2+ The ratio of the number of atoms is 1:100;

[0042] 3) Put the solution obtained in step 2) into a water bath at 30°C for 30 minutes;

[0043] 4) The photoanode material TiO to be sensitized 2 Immerse in the solution prepared in step 3) for 5 minutes, take it out and dry it with nitrogen;

[0044] 5) Immerse the photoanode material obtained in step 4) into the Na prepared in step 2) 2 In the S solution for 5 minutes, take it out and dry it with nitrogen gas, and then form a Cu-doped PbS semiconductor quantum dot sensitizer layer on the photoanode material;

[0045] 6) Equipped with Cd(NO at a concentrat...

Embodiment 3

[0049] The specific steps of the copper-doped lead sulfide quantum dot sensitizer for solar cells and the preparation method are:

[0050] 1) Equipped with Pb(NO at a concentration of 0.1M 3 ) 2 solution and Na 2 S solution, placed in a water bath at 20-50°C for 30-60min;

[0051] 2) CuCl 2 The solution is added to the Pb(NO 3 ) 2 solution, in which Cu 2+ with Pb 2+ The ratio of the number of atoms is 1:1000;

[0052] 3) Put the solution obtained in step 2) into a water bath at 30°C for 30 minutes;

[0053] 4) The photoanode material TiO to be sensitized 2 Immerse in the solution prepared in step 3) for 5 minutes, take it out and dry it with nitrogen;

[0054] 5) Immerse the photoanode material obtained in step 4) in the Na2S solution prepared in step 2) for 5 min, take it out and dry it with nitrogen, and then form a Cu-doped PbS semiconductor quantum dot sensitizer layer on the photoanode material;

[0055] 6) Equipped with Cd(NO at a concentration of 0.1M 3 ) 2...

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Abstract

The invention relates to a Cu-doped PbS quantum dot sensitizer used for a solar cell and a manufacturing method of the Cu-doped PbS quantum dot sensitizer. According to the method, Cu impurity atoms are doped to PbS semiconductor quantum dots to serve as sensitizers, and the Cu impurity atoms and the PbS semiconductor quantum dots are assembled to form the quantum dot sensitized solar cell. The transmission routes of electron holes inside the cell are optimized, and therefore the electron holes can be more rapidly separated, electrons can be more effectively injected into conduction bands of large energy gap oxide semiconductors, occurrence of dark currents is restrained, and short-circuit currents and photoelectric conversion efficiency of the solar cell are improved. The method is simple, easy to operate, low in cost and suitable for large-area manufacture.

Description

technical field [0001] The invention belongs to the technical field of solar energy, and more specifically relates to a doped quantum dot sensitizer for solar cells and a preparation method thereof. Background technique [0002] Facing the depletion of global fossil energy, the inexhaustible solar energy can replace fossil energy to solve the increasingly serious energy crisis. Among all kinds of new solar cells, dye-sensitized solar cells (DSSCs) have become a research hotspot due to their low cost, simple manufacturing process, and relatively high photoelectric conversion efficiency (O’Regan, B., M., Nature, 1991, 353, 737). DSSCs are formed by using the wide-bandgap semiconductor nanocrystalline film adsorbed with dye as the positive electrode, the conductive glass coated with a layer of platinum on the surface as the counter electrode, and an oxidation-reduction electrolyte is added between the positive electrode and the counter electrode. Dye molecules absorb solar e...

Claims

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Application Information

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IPC IPC(8): H01G9/042H01G9/20
Inventor 邹小平黄宗波周洪全
Owner BEIJING INFORMATION SCI & TECH UNIV