Double-doped In quantum dot sensitizing agent for solar cell and preparation method
A solar cell and quantum dot sensitization technology, applied in the field of solar energy, to achieve the effects of improving short-circuit current and photoelectric conversion efficiency, rapid separation, and suppressing dark current
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Embodiment 1
[0030] The specific steps of double-doped In quantum dot sensitizer and preparation method for solar cells are:
[0031] 1) Equipped with Pb(NO at a concentration of 0.1M 3 ) 2 solution and Na 2 S solution, placed in a water bath at 20-50°C for 30-60min;
[0032] 2) Add InCl 3 The solution is added to the Pb(NO 3 ) 2 In the solution, the atomic number ratio of In and Pb is 1:1;
[0033] 3) Put the solution obtained in step 2) into a water bath at 30°C for 30 minutes;
[0034] 4) The photoanode material TiO to be sensitized 2 Immerse in the solution prepared in step 3) for 5 minutes, take it out and dry it with nitrogen;
[0035] 5) Immerse the photoanode material obtained in step 4) into the Na prepared in step 2) 2In the S solution for 5 minutes, take it out and dry it with nitrogen gas, and then form an In-doped PbS semiconductor quantum dot sensitizer layer on the photoanode material;
[0036] 6) Equipped with Cd(NO at a concentration of 0.1M 3 ) 2 solution and ...
Embodiment 2
[0042] The specific steps of the indium-doped lead sulfide quantum dot sensitizer for solar cells and the preparation method are as follows:
[0043] 1) Equipped with Pb(NO at a concentration of 0.1M 3 ) 2 solution and Na 2 S solution, placed in a water bath at 20-50°C for 30-60min;
[0044] 2) Add InCl 3 The solution is added to the Pb(NO 3 ) 2 In the solution, the atomic number ratio of In and Pb is 1:1;
[0045] 3) Put the solution obtained in step 2) into a water bath at 30°C for 30 minutes;
[0046] 4) The photoanode material TiO to be sensitized 2 Immerse in the solution prepared in step 3) for 5 minutes, take it out and dry it with nitrogen;
[0047] 5) Immerse the photoanode material obtained in step 4) into the Na prepared in step 2) 2 In the S solution for 5 minutes, take it out and dry it with nitrogen gas, and then form an In-doped PbS semiconductor quantum dot sensitizer layer on the photoanode material;
[0048] 6) Equipped with Cd(NO at a concentration...
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