Supercharge Your Innovation With Domain-Expert AI Agents!

Double-doped In quantum dot sensitizing agent for solar cell and preparation method

A solar cell and quantum dot sensitization technology, applied in the field of solar energy, to achieve the effects of improving short-circuit current and photoelectric conversion efficiency, rapid separation, and suppressing dark current

Inactive Publication Date: 2014-06-11
BEIJING INFORMATION SCI & TECH UNIV
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the work of PbS-doped In and CdS-doped In as sensitizers in PbS / CdS co-sensitized solar cells to improve the short-circuit current of QDSSCs has not been reported so far.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Double-doped In quantum dot sensitizing agent for solar cell and preparation method
  • Double-doped In quantum dot sensitizing agent for solar cell and preparation method
  • Double-doped In quantum dot sensitizing agent for solar cell and preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] The specific steps of double-doped In quantum dot sensitizer and preparation method for solar cells are:

[0031] 1) Equipped with Pb(NO at a concentration of 0.1M 3 ) 2 solution and Na 2 S solution, placed in a water bath at 20-50°C for 30-60min;

[0032] 2) Add InCl 3 The solution is added to the Pb(NO 3 ) 2 In the solution, the atomic number ratio of In and Pb is 1:1;

[0033] 3) Put the solution obtained in step 2) into a water bath at 30°C for 30 minutes;

[0034] 4) The photoanode material TiO to be sensitized 2 Immerse in the solution prepared in step 3) for 5 minutes, take it out and dry it with nitrogen;

[0035] 5) Immerse the photoanode material obtained in step 4) into the Na prepared in step 2) 2In the S solution for 5 minutes, take it out and dry it with nitrogen gas, and then form an In-doped PbS semiconductor quantum dot sensitizer layer on the photoanode material;

[0036] 6) Equipped with Cd(NO at a concentration of 0.1M 3 ) 2 solution and ...

Embodiment 2

[0042] The specific steps of the indium-doped lead sulfide quantum dot sensitizer for solar cells and the preparation method are as follows:

[0043] 1) Equipped with Pb(NO at a concentration of 0.1M 3 ) 2 solution and Na 2 S solution, placed in a water bath at 20-50°C for 30-60min;

[0044] 2) Add InCl 3 The solution is added to the Pb(NO 3 ) 2 In the solution, the atomic number ratio of In and Pb is 1:1;

[0045] 3) Put the solution obtained in step 2) into a water bath at 30°C for 30 minutes;

[0046] 4) The photoanode material TiO to be sensitized 2 Immerse in the solution prepared in step 3) for 5 minutes, take it out and dry it with nitrogen;

[0047] 5) Immerse the photoanode material obtained in step 4) into the Na prepared in step 2) 2 In the S solution for 5 minutes, take it out and dry it with nitrogen gas, and then form an In-doped PbS semiconductor quantum dot sensitizer layer on the photoanode material;

[0048] 6) Equipped with Cd(NO at a concentration...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a double-doped In quantum dot sensitizing agent for a solar cell and a preparation method of the double-doped In quantum dot sensitizing agent. According to the method, In impurity atoms are doped into PbS and CdS semiconductor quantum dots respectively to be used as the sensitizing agent to be assembled into the quantum dot-sensitized solar cell, after In double doping, the light-absorbing capacity of a PbS / CdS quantum dot semiconductor is enhanced obviously, the transmission path of electron holes in the cell is optimized apparently, and thus the electron holes can be separated more rapidly; consequently, electrons can be more effectively injected into a conduction band of a large energy gap oxide semiconductor, dark currents are restrained, and short-circuit current and photoelectric conversion efficiency of the solar cell can be improved. The method is simple, easy to operate, low in cost and capable of achieving large-area manufacture.

Description

technical field [0001] The invention belongs to the technical field of solar energy, and more specifically relates to a doped quantum dot sensitizer for solar cells and a preparation method thereof. Background technique [0002] Facing the depletion of global fossil energy, the inexhaustible solar energy can replace fossil energy to solve the increasingly serious energy crisis. Among all kinds of new solar cells, dye-sensitized solar cells (DSSCs) have become a research hotspot due to their low cost, simple manufacturing process, and relatively high photoelectric conversion efficiency (O’Regan, B., M., Nature, 1991, 353, 737). DSSCs are formed by using the wide-bandgap semiconductor nanocrystalline film adsorbed with dye as the positive electrode, the conductive glass coated with a layer of platinum on the surface as the counter electrode, and an oxidation-reduction electrolyte is added between the positive electrode and the counter electrode. Dye molecules absorb solar e...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01G9/042H01G9/20
Inventor 邹小平黄宗波周洪全
Owner BEIJING INFORMATION SCI & TECH UNIV
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More