Deep level transient spectroscopy technology based ionizing radiation damage defect detecting method for bipolar devices

A technology of bipolar devices and ionizing radiation, applied in the field of electronics, can solve the problem that the damage defects of bipolar transistors cannot be quantified due to ionizing radiation

Inactive Publication Date: 2014-06-18
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The present invention aims to solve the problem that the ionizing radiation damage defect of the existing bipolar transistor cannot be quantified, and the present invention provides a method for detecting the ionizing radiation damage defect of the bipolar device based on the deep-level transient spectrum technology

Method used

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  • Deep level transient spectroscopy technology based ionizing radiation damage defect detecting method for bipolar devices
  • Deep level transient spectroscopy technology based ionizing radiation damage defect detecting method for bipolar devices
  • Deep level transient spectroscopy technology based ionizing radiation damage defect detecting method for bipolar devices

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specific Embodiment approach 1

[0036] Specific implementation mode 1: A method for detecting ionizing radiation damage defects of bipolar devices based on deep-level transient spectrum technology described in this implementation mode, the specific process of the method is:

[0037] The first step is to conduct ionizing radiation tests on the bipolar devices, and install the bipolar devices on the low-temperature test bench of the deep-level transient spectrometer to ensure the low-temperature test of the bipolar devices and the deep-level transient spectrometer The platform is tightly connected, and the base and collector of the bipolar device are respectively connected to the high and low test connectors of the deep-level transient spectrometer;

[0038] The second step is to set the test parameters, which include the reverse bias voltage V R , pulse voltage V P , test cycle T W , pulse width T P and temperature sweep range, and guaranteed reverse bias V R -20V to +20V, pulse voltage V P -3V to +3V, t...

specific Embodiment approach 2

[0041] Embodiment 2: The difference between this embodiment and the method for detecting defects of ionizing radiation damage of bipolar devices based on deep-level transient spectrum technology described in Embodiment 1 is that the ionizing radiation damage of bipolar devices The defect is the defect concentration, and the defect concentration includes the defect concentration of the oxide charge of the bipolar device and the defect concentration of the interface state, wherein: the defect concentration of the oxide charge of the bipolar device is

[0042] N T 1 = 2 N D ΔC 1 C R 1 (formula one),

[0043] Among them, ΔC 1 is the peak height of the DLTS signal peak of the oxide charge, C R1 Indicates the...

specific Embodiment approach 3

[0047] Embodiment 3: The difference between this embodiment and the method for detecting defects of ionizing radiation damage of bipolar devices based on deep-level transient spectrum technology described in Embodiment 1 is that the ionizing radiation damage of bipolar devices The defect is a defect energy level, and the defect energy level includes the defect energy level of the oxide charge of the bipolar device and the defect energy level of the interface state, wherein: the defect energy level of the oxide charge of the bipolar device is

[0048] E. T1 =f(T W ) T 1 (Formula 3),

[0049] Among them, f(T W ) represents the defect energy level factor, T 1 is the temperature corresponding to the DLTS signal peak of the oxide charge,

[0050] The defect energy level of the interface state of the bipolar device is

[0051] E. T2 =f(T W ) T 2 (Formula 4);

[0052] T 2 Indicates the temperature corresponding to the DLTS signal peak of the interface state.

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Abstract

The invention relates to a deep level transient spectroscopy technology based ionizing radiation damage defect detecting method for bipolar devices, belonging to the field of electronic technology. The method is used for solving the problem that the ionizing radiation damage defect of the existing bipolar transistor is difficult to quantify. The method comprises the following steps: firstly, installing a bipolar device on a low temperature testing table of a deep level transient spectrometer and connecting the base electrode and the collector electrode of the bipolar device with a high test connector and a lower test connector of the deep level transient spectrometer respectively, wherein the bipolar device and the low temperature testing table of the deep level transient spectrometer must be connected tightly; secondly, setting the test parameters, wherein the parameters include reverse bias voltage VR, impulse voltage VP, test period TW, pulse width TP and the temperature scanning range; and obtaining oxide charge, as well as temperature, peak height and full width at half maximum of the peak, corresponding to interface-state DLTS (deep level transient spectroscopy) signal peak; and finally, acquiring the ionizing radiation damage defect of the bipolar device according to the temperature, the peak height and the full width at half maximum of the peak, corresponding to the interface-state DLTS signal peak. The method can be applied to the defect detecting field.

Description

technical field [0001] The invention belongs to the field of electronic technology. Background technique [0002] Bipolar transistor (BJT, Bipolar Junction Transistor) has the advantages of excellent current drive capability, noise characteristics, linearity and matching characteristics, etc., and is used in various electronic circuits such as analog, hybrid integrated circuits and BiCMOS (Bipolar Complementary Metal Oxide Semiconductor) circuits. It has important applications and is an important electronic device widely used in spacecraft. In the space radiation environment, high-energy charged particles passing through the outer protective structure of the spacecraft will produce a variety of space radiation effects on the electronic components in the cabin, and the most important radiation effect is the ionizing radiation effect. [0003] The effect of ionizing radiation is mainly on the passivation layer (SiO 2 ) causing damage, generating oxide trapping positive charg...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/61
Inventor 李兴冀刘超铭杨剑群马国亮肖景东何世禹杨德庄
Owner HARBIN INST OF TECH
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