charge pump and memory
A charge pump and electric appliance technology, applied in static memory, read-only memory, information storage, etc., can solve the problem of large current flowing through the charge pump unit and affect the efficiency of the charge pump, so as to reduce partial voltage, reduce current, and improve efficiency effect
Active Publication Date: 2016-08-17
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology
However, the read voltage of the memory is generally about 3V, which is lower than the programming voltage. Therefore, when the existing charge pump is read (read), the current flowing through the charge pump unit is relatively large, thereby affecting the efficiency of the charge pump.
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[0029] The charge pump and memory of the present invention will be described in more detail below in conjunction with schematic diagrams, wherein a preferred embodiment of the present invention is shown, and it should be understood that those skilled in the art can modify the present invention described here and still realize the beneficial effects of the present invention . Therefore, the following description should be understood as the broad knowledge of those skilled in the art, but not as a limitation of the present invention.
[0030] In the interest of clarity, not all features of an actual implementation are described. In the following description, well-known functions and constructions are not described in detail since they would obscure the invention with unnecessary detail. It should be appreciated that in the development of any actual embodiment, numerous implementation details must be worked out to achieve the developer's specific goals, such as changing from one...
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The invention discloses a charge pump which is used for providing a first voltage and a second voltage for an electric appliance and comprises n groups of sub charge pumps, wherein each sub charge pump comprises multilevel series-wound charge pump units; each charge pump unit comprises a charge pump unit input end, a charge pump unit output end and a reference clock end; in each group of sub charge pumps, the charge pump unit input end of each level of charge pump unit except for the first level of charge pump unit is connected with the charge pump unit output unit of the previous level of charge pump unit. The invention also discloses a storage comprising the charge pump. When the charge pump is used for providing the second voltage, n groups of sub charge pumps are mutually connected in parallel, the n groups of sub charge pumps have a shunting effect, the current flowing by each group of sub charge pumps is reduced, the current on the charge pump units is reduced, the partial voltage on each level of charge pump unit is reduced, and the efficiency of the charge pump is improved.
Description
technical field [0001] The invention relates to the technical field of circuit design, in particular to a charge pump and a memory. Background technique [0002] In integrated circuit systems, there are often many circuits that require DC voltages higher than the supply voltage for specific operations. For example, in flash memory, a higher voltage must be generated for data programming and erasing. The flash memory includes a plurality of memory cell arrays. Usually, each memory cell is a field effect transistor (FET), and the field effect transistor includes a floating gate located on the surface of the tunnel oxide layer. The floating gate can accumulate charges, so The charge corresponds to one bit of data information. The programming and erasing of memory data is carried out by controlling the injection and release of charges in the floating gate. The programming of memory data needs to inject the charge in the channel through the tunnel oxide layer into the floating...
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IPC IPC(8): H02M3/07G11C16/10
Inventor 杨光军
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP