Ternary solvent system aluminum nitride slurry formula for preparing high-heat conduction ceramic substrate

Abstract

The invention discloses a ternary solvent system aluminum nitride slurry formula for preparing a high-heat conduction ceramic substrate. The ternary solvent system aluminum nitride slurry formula is characterized in that aluminum nitride slurry comprises the following components in parts by weight: 105-110 parts of aluminum nitride powder, 6-10 parts of ternary composite sintering auxiliary agents, 45-47 parts of ternary organic mixed solvents, 2-2.5 parts of dispersing agents, 10-12.5 parts of bonding agents and 5-8 parts of plasticizing agents, wherein the ternary organic mixed solvents are mixtures of ethanol, normal propyl alcohol and butyl alcohol or mixtures of the ethanol, isopropanol and the butyl alcohol. According to the ternary solvent system aluminum nitride slurry formula, the ternary organic mixed solvents have good comprehensive properties, namely surface tension and dielectric constant, so that the powder obtains good suspension property, slurry rheological property and uniformity in the ternary organic mixed solvents.

Description

technical field [0001] The invention relates to an aluminum nitride slurry formula for preparing ceramic substrates, in particular to a ternary solvent system aluminum nitride slurry formula for preparing high thermal conductivity ceramic substrates, which is suitable for tape casting. Background technique [0002] In the past 20 to 30 years, with the rapid development of microelectronics technology, especially hybrid integrated circuits and multi-chip component technologies, higher requirements have been put forward for ceramic substrates, which are important pillars of integrated circuits, and they are required to have good thermal conductivity. The widely used A1 2 o 3 Ceramic substrate materials have disadvantages such as low thermal conductivity, large dielectric constant, and a large difference between the linear expansion coefficient and that of silicon components. Therefore, researchers have developed AlN, BeO, SiC, and Si 3 N 4 etc. to try to replace A1 2 o 3 s...

AI Technical Summary

Problems solved by technology

The widely used A1 2 o 3 Ceramic substrate materials have disadvantages such as low thermal conductivity, large dielectric constant, and a large difference between the linear expansion coefficient and that of silicon components. Therefore, researchers have developed AlN, BeO, SiC, and Si 3 N 4 etc. to try to replace A1 2 o 3 Substrate