Magnetron and magnetron sputtering equipment using the magnetron

Abstract

A magnetron and a magnetron sputtering device. The magnetron comprises an external magnetic pole (22) and an internal magnetic pole (21) which are opposite in polarities. On the radial section perpendicular to the magnetron, the internal magnetic pole (21) is in an asymmetric closed ring formed by two sections of a helix line connected in series end to end. The helix line complies with the following polar coordinate equation: r=a*θ n+b*(cosθ)m+c*(tanθ)k+d, where r and θ are polar coordinates, n, m and k are indexes of θ, cosθ and tanθ respectively, and -2<n<2, -2<m<2, -2<k<2. The internal magnetic pole (21) and the external magnetic pole (22) corresponding thereto in shape are nested together in a non-contact mode, and a closed and asymmetric channel (23) is formed between the two magnetic poles. The magnetron sputtering device comprises the magnetron. By adopting the magnetron and the device, the process conditions for starting and maintaining plasma can be met at a lower sputtering air pressure, and the uniformity of film thickness in the radial direction of a substrate can also be improved, thereby improving the film forming quality.

Description

technical field [0001] The invention relates to the technical field of microelectronic processing, in particular to a magnetron and a magnetron sputtering device using the magnetron. Background technique [0002] The magnetron sputtering device is a device that deposits the material sputtered from the target on the workpiece to be processed by colliding the particles in the plasma with the target to form a thin film. In practical applications, in order to improve the efficiency of sputtering and the utilization of the target, a magnetron is provided on the back of the target, and the magnetic field generated by the magnetron is used to extend the trajectory of the electrons, increasing the electron and process gas (such as Argon) collision probability, thereby increasing the density of the plasma, thereby improving the efficiency of sputtering and the utilization of the target. [0003] Figure 1a It is a radial cross-sectional view of an existing magnetron. Figure 1b for...

AI Technical Summary

Problems solved by technology

[0004] During the actual use of the above-mentioned magnetron 100, since the helical channel formed by the inner magnetic pole 102 and the outer magnetic pole 104 is connected end to end, the helical channel is longer, and the inner magnetic pole 102 and the outer magnetic pole 104 have more spiral turns, so The distance between the inner magnetic pole 102 and the outer magnetic pole 104 is relatively narrow, which makes the magnetron sputtering equipment require a higher sputtering pressure to start and maintain the plasma, resulting in a decrease in the compactness and uniformity of the film

[0005] In addition, since the above-mentioned magnetron 100 can uniformly corrode the target material, that is, the number of particles sputtered from each position of the target material 10 is approximately equal at the same time, and since the particles sputtered from the target material 10 move to the substrate The overall angle α of 11, that is, the angle between two lines connecting any point on the target 10 and the two endpoints of a diameter of the substrate 11, gradually decreases from the center to the edge of the target 10 For example, the overall angle α1 of particles sputtered from a position near the center of the target 10 is larger than the overall angle α2 of particles sputtered from a position near the edge of the target, resulting in a large number of particles moving to the central region of the substrate 11 Due to the amount of movement to the edge region of the substrate 11, this makes the thickness of the film deposited on the substrate 11 uneven in the radial direction of the substrate 11. In this case, the distance between the target 10 and the substrate 11 D is particularly obvious when it is in the range of 50-70 mm. For example, experiments have shown that when the above-mentioned magnetron 100 is used to scan the target surface, and the distance between the target 10 and the substrate 11 is in the range of 50-60 mm, the diameter The uniformity of the film thickness deposited on the substrate 11 of 300 mm is greater than 3%, therefore, the uniformity of the film thickness in the radial direction of the substrate 11 is poor

Images