Method for designing terahertz quantum well photoelectric detector

Abstract

The invention provides a method for designing a terahertz quantum well photoelectric detector. The method comprises the steps that (1) according to wave length lambda p of peak response frequency of the terahertz quantum well photoelectric detector in device materials, a period P of an etching grating is designed to enable P equals to the lambda p; (2) electromagnetic field distribution inside the terahertz quantum well photoelectric detector under irradiation of incident light is calculated; (3) components which contribute to intersubband transition in the electromagnetic field distribution are extracted, integration is carried out on energy of the components in an active area, and the total energy It which contributes to the intersubband transition in the active area is obtained; (4) different grating heights h are set, the total energy It under the different grating heights h is calculated, and the grating height h when the total energy It is maximum is selected at the height of the etching grating. The method can effectively improve the performance of the terahertz quantum well photoelectric detector at the peak response frequency point, and has important significance on achievement and imaging application of high-performance terahertz quantum well photoelectric detectors.

Description

technical field [0001] The invention belongs to the technical field of semiconductor optoelectronic devices, in particular to a design method of a terahertz quantum well photodetector. Background technique [0002] Terahertz (THz) detectors are key devices for various THz research and various THz application systems. THz quantum well photodetectors (QWPs) are widely considered to be one of the most promising THz detectors due to their small size, easy integration, and fast response. [0003] From the working principle, THz QWP is an inter-subband transition (ISBT) detector. However, due to the limitation of quantum mechanics, if the incident light is irradiated vertically on the THz QWP surface, ISBT will not occur, and thus no photocurrent will be generated. Therefore, the usual practice is to obliquely incident light into the device, such as along the direction of the Brewster angle on the surface of the QWP, or grind the end face of the QWP to an angle of 45 degrees, an...

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Problems solved by technology

[0005] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a design method for a terahertz quantum well photodetector, which is used to solve the problem of the terahertz quantum well photodetector in the prior art due to the unsuitability of the grating height. Problems leading to reduced coupling efficiency

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