Adhesion detection structure in a semiconductor device and preparation method thereof

Abstract

The invention relates to an adhesion value detection structure in a semiconductor device and a preparation method thereof. The method comprises the following steps: providing a semiconductor substrate; sequentially depositing a first oxide layer and a metal material layer on the semiconductor substrate; patterning portion of the metal material layer to form a first notch on the metal material layer; depositing an etching stopping layer on the metal material layer and the first notch; depositing a second oxide layer on the etching stopping layer; and forming a supporting substrate on the second oxide layer, and etching the semiconductor substrate, the first oxide layer and the metal material layer from the back side to form a second notch while exposing the etching stopping layer in the first notch. The structure provided by the invention can accurately measure the adhesion value between a low K material layer and a NDC material layer, and at the same time, the toughened glass fiber material with high tenacity ensures no fragmentation when stress and load is applied.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular, the invention relates to an adhesion detection structure in a semiconductor device and a preparation method thereof. Background technique [0002] With the continuous improvement of semiconductor manufacturing technology and the continuous reduction of the size of semiconductor devices, the size of integrated circuit devices is continuously reduced. In the back-end process (The back end of line, BEOL), welding wire bonding technology is a widely used method for connecting semiconductor dies with circuits to pins on the original package to realize I / O (in / out) connection, wherein the size of the wire bond pads and the arrangement and layout of the leads determine the final size of the integrated circuit device. Active area combination (Bond Over Active, BOA) technology enables active devices, electrostatic discharge circuits (Electro-Static discharge, ESD), power supply and bonding w...

AI Technical Summary

Problems solved by technology

[0004] In the prior art, the 4-point bend test is usually selected and cannot really reflect the adhesion force in the device. The 4-point bend test (4-point bend test) is as follows: figure 1 As shown, the detection structure includes a semiconductor substrate 101, a glue (Glue) 102, an oxide layer 103, a low-K material layer 104, an NDC material layer 105, a second oxide layer 106, and an upper silicon substrate 107, The four monitoring points are shown as circles, wherein the adhesion (Adhesion value) between the low-K material layer and the NDC material layer is 25J / m 2 , wherein the substrate is Si, and the Si material is relatively brittle and has poor toughness, so brittle fracture is easy to occur, so it is difficult to show the true adhesion between the low-K material layer and the NDC material layer, Even if notches are formed on the substrate

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