High Efficiency Finfet Diodes

Abstract

The present invention relates to high-efficiency FinFET diodes and methods of manufacturing the same, which are designed to address the degradation of conventional FinFET diodes caused by reduced active area. The FinFET diode has a doped substrate, two sets of separated substantially parallel equidistant semiconductor fin structures, a dielectric layer formed between the two sets of fin structures and used for insulation between the fin structures, vertically across the two sets of A plurality of substantially equidistant and parallel elongated gate structures of the fin structure, and two sets of semiconductor strips are vertically formed on the two sets of fin structures respectively. The two sets of semiconductor strips are doped to have opposite conductivity types: p-type and n-type. FinFET diodes also have metal contacts formed over the semiconductor strips. In one embodiment, the semiconductor strips may be formed integrally with the fin structure by epitaxial growth and in-situ doping.

Description

[0001] This application claims priority to US Provisional Patent Application Serial No. 61 / 747,764, filed December 31, 2012, the entire contents of which are hereby incorporated by reference. technical field [0002] The present invention relates generally to the field of semiconductors, and more particularly to high efficiency FinFET diodes. Background technique [0003] The semiconductor industry has evolved to pursue higher device density, higher performance, and lower cost nanotechnology nodes. As such advances have occurred, the challenges of fabrication and design issues have prompted the development of three-dimensional designs, such as Fin Field Effect Transistor (FinFET) devices. The use of FinFET devices has gained popularity in the semiconductor industry. FinFET devices offer several advantages over traditional metal-oxide-semiconductor field-effect transistor (MOSFET) devices, also known as planar devices. These advantages may include higher chip area efficienc...

AI Technical Summary

Problems solved by technology

However, diodes constructed using FinFET structures have the disadvantage of reduced efficiency compared to conventional planar semiconductor diodes due to degradation caused by the fin structure

The presence of multiple fin structures in a FinFET diode reduces the effective area used to generate the injection current, thereby reducing the diode efficiency determined by the injection current generated per unit cell area

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