Method for in-situ growth of graphene on insulating substrate by double flame method in atmospheric environment

Abstract

The invention discloses a method for graphene in-situ growth on an insulation substrate through a double-flame method under the atmospheric environment. A nickel film is deposited on a SiO2 substrate first, then the carburization / decarbonization mechanism of the nickel film and an unbalance surface segregation process are used, and graphene thin films are formed on the SiO2 substrate. The graphene thin films can grow on the upper face and the lower face of the nickel film, then the nickel film and a graphene outer film are removed, and an in-situ growing graphene thin film is directly obtained on the SiO2 substrate. The novel method for high-quality graphene in-situ deposition on insulation medium such as the SiO2 substrate is provided. Double layers or a few layers of graphene are directly prepared on the SiO2 substrate in a batch mode, and traditional complex procedures and processes for graphene growing and transferring are removed. The method for direct graphene in-situ growth on the insulation substrate has the advantages of being high in efficiency and low in cost, energy is saved, and accordingly the future practical application of graphene can be obviously and well improved.

Description

technical field [0001] The invention relates to a method for in-situ growth of graphene on an insulating substrate by a double flame method in an atmospheric environment. Background technique [0002] Graphene usually has three forms: single-layer graphene, double-layer graphene and few-layer graphene. The number of few-layer graphene layers is generally within 4 layers, and more than 5 layers are considered bulk graphite. [0003] Graphene is a flat layer of carbon atoms with a thickness of only one atom. The carbon atoms are arranged in a honeycomb lattice to form a hexagonal network structure material. It is considered as a promising candidate material for future electronic applications. The carrier mobility of graphene can be as high as 200,000 cm 2 V -1 the s -1 , and its thermal conductivity can reach about 5,000Wm -1 K -1 . Its outstanding properties have attracted great attention from scientists. Generally, mechanical exfoliation, graphite oxidation, liquid ph...

AI Technical Summary

Problems solved by technology

[0011] Chinese invention patent (application number: 201110206608.6, patent name: a method for preparing graphene nanoribbons on an insulating substrate), although the patent directly grows graphene on an insulating substrate, its step 1) is on an insulating substrate Preparation of monoatomic layer steps, and those skilled in the art know that the preparation of monoatomic layer steps is a very complicated process, which has high requirements for preparation equipment and conditions

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