Gate oxide failure point positioning method

Abstract

The invention discloses a gate oxide failure point positioning method. after removal of a metal layer, a semiconductor structure to be measured obtained after removal of the metal layer is scanned by the use of an electron beam formed by medium and high accelerating voltage so as to obtain an electron microscope with a failure point pattern; and according to the electron microscope, the position of the failure point in a gate oxide is determined so as to more precisely position a breakdown point of the gate oxide. Furthermore, success rate of gate oxide breakdown voltage test failure analysis is raised effectively; preparation time of a follow-up transmission electron microscope sample is further shortened; efficiency of gate oxide breakdown voltage test failure analysis is raised; and necessary conditions are provided for the preparation of the transmission electron microscope sample which requires precise positioning. In addition, the breakdown point of the gate oxide and failure analysis of the gate oxide can still be positioned precisely when an optical positioning machine cannot be used.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for locating failure points of gate oxide layers. Background technique [0002] With the continuous shrinking of the size of integrated circuits, the quality and reliability of the gate oxide (GOX) of semiconductor devices becomes more and more important. However, due to the reduction of the size of semiconductor devices, there are The failure point becomes more and more difficult. [0003] The gate oxide breakdown voltage test (GOI V-ramp) is a common method to evaluate the quality of the gate oxide layer, and the gate oxide breakdown voltage test structure is generally very large (thousands, or even tens of thousands of square microns), so The location of the gate oxide breakdown point (also known as the failure point) is particularly important in the failure analysis of the gate oxide breakdown voltage test as a prerequisite for physical failure a...

AI Technical Summary

Problems solved by technology

[0015] In view of the above existing problems, the present invention discloses a method for locating the failure point of the gate oxide layer, so as to overcome the fact that the location of the failure point of the ga

Images