Ion implantation apparatus and operation method of ion implantation apparatus
An ion implantation device and ion implantation technology, which are applied in the directions of ion implantation plating, coating, electrical components, etc., can solve the problem of no record of restarting the ion beam, and achieve the effect of suppressing the impact
Active Publication Date: 2016-04-20
NISSIN ION EQUIP CO LTD
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[0006] In the method of Patent Document 1, it is described that hydrogen plasma is generated inside the ion source to clean the sample other than ion implantation, but there is no description on how to restart the ion beam thereafter.
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[0037] Next, the ion implantation apparatus of the present invention and its operating method will be described with reference to the drawings.
[0038] figure 1 A top view of an ion implantation apparatus IM used in the present invention is shown. The overall configuration of the ion implantation apparatus IM will be briefly described. In addition, the directions of the illustrated XYZ axes are perpendicular to each other.
[0039] The plasma generation container 1 is a substantially cubic container whose dimension in the Y-axis direction is longer than that in the X-axis direction as shown, and a process gas (BF3 or PH3, etc.) is supplied into the container from a first gas cylinder 9 . In addition, the potential of the plasma generating container 1 is fixed at a predetermined potential by the accelerating power supply Vacc. In addition, the cathode F is introduced into the plasma generation container 1, and a predetermined potential difference is set between the cathode ...
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The present invention provides an ion implanter capable of restarting an ion beam in a short time after cleaning the inside of an ion source, and an operating method of the ion implanter. When performing ion implantation, the ion implantation device introduces process gas into the ion source (IS), uses an extraction electrode system (2) composed of multiple electrodes, and extracts a ribbon-shaped ion beam from the ion source (IS) ( 3) Irradiate the substrate (4) arranged in the processing chamber (5) with an ion beam (3), and when the ion implantation process is not performed, introduce cleaning gas into the ion source (IS), and the ion source (IS) The interior is cleaned. In such an ion implantation device (IM), when the ion beam (3) is restarted after cleaning, a specified voltage is applied to the extraction electrode system (2), and the operating parameters of the ion source (IS) are set to Operation parameters corresponding to the injection recipe of the substrate ( 4 ) to be processed are set.
Description
technical field [0001] The present invention relates to an ion implantation apparatus for irradiating ion beams to silicon wafers or glass substrates to perform ion implantation treatment on the wafers or substrates, and more particularly to an ion implantation apparatus having a cleaning function and an operating method of the ion implantation apparatus. Background technique [0002] In the ion implantation apparatus, if the operation of extracting the ion beam from the ion source is continued for a long time, deposits adhere to the electrodes of the extraction electrode system constituting the ion source and the inside of the plasma generation container constituting the ion source. If this is left unattended, it will cause abnormal discharge between the electrodes of the extraction electrode system. [0003] If the number of occurrences of the abnormal discharge increases, the normal operation of the ion source cannot be maintained, so the inside of the ion source should b...
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IPC IPC(8): H01J37/317H01J37/30
CPCC23C14/48C23C14/564H01J37/3171H01J2237/022H01J2237/304H01J37/317
Inventor 松本武
Owner NISSIN ION EQUIP CO LTD