TFT substrate, manufacturing method thereof, and display panel
A manufacturing method and substrate technology, applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve problems such as poor reliability of LTPSTFT, achieve the effects of reducing hump effect, high coverage, and improved reliability
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Embodiment 1
[0044] This embodiment provides a kind of TFT substrate, its structure is as follows figure 2 shown, including:
[0045] Substrate 201;
[0046] a buffer layer 202 on the surface of the substrate, the surface of the buffer layer 202 facing away from the substrate 201 has an opening;
[0047] an active layer 203 filling the opening;
[0048] The gate insulating layer 204 located on the side of the active layer 203 facing away from the substrate 201, the surface of the gate insulating layer 204 is in direct contact with the surface of the active layer 203 facing away from the substrate 201;
[0049] Covering the gate 205 on the surface of the gate insulating layer 204 facing away from the substrate 201 .
[0050] In the above-mentioned TFT substrate, an opening is formed in the surface of the buffer layer 202, and then the active layer 203 is formed in the opening, thereby forming a structure in which the active layer 203 is embedded in the surface of the buffer layer 202, t...
Embodiment 2
[0060] This embodiment provides a method for manufacturing the TFT substrate described in Embodiment 1, comprising the following steps:
[0061] Step S21: providing a substrate, forming a buffer layer on the surface of the substrate, and having an opening on the surface of the buffer layer facing away from the substrate.
[0062] Such as Figure 3 ~ Figure 6 As shown, the specific process of the above steps may include:
[0063] Step S211: providing a substrate 301, depositing a buffer layer material 302 on one side of the substrate 301, such as image 3 shown;
[0064] The deposited buffer layer material 302 is preferably silicon oxide and / or silicon nitride. When the buffer layer to be manufactured is a laminated structure, a layer of silicon nitride can be deposited on the substrate 301 first, and then silicon oxide can be deposited on the silicon nitride to form a laminated structure for subsequent formation of a buffer layer with a laminated structure. .
[0065] The...
Embodiment 3
[0096] This embodiment provides another method for manufacturing the TFT substrate described in Embodiment 1, such as Figures 14 to 17 As shown, the method includes the following steps:
[0097] Step S31: Provide a substrate 1401, and form a first buffer layer 1402 on the surface of the substrate 1401, such as Figure 14 shown;
[0098] The first buffer layer 1402 is formed on one side of the substrate 1401, and a physical vapor deposition or chemical vapor deposition process can be used. The material of the first buffer layer 1402 can be silicon oxide, silicon nitride or other stable properties and high resistivity. s material. Denote the thickness of the first buffer layer 1402 as h1.
[0099] Step S32: forming an active layer 1501 on the surface of the first buffer layer 1402 facing away from the substrate 1401, such as Figure 15 shown;
[0100] A photolithography process is preferably used to form the active layer 1501 , and the specific material of the active layer...
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