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System for purifying chlorosilane through non-relevant tower differential pressure thermal coupling

A chlorosilane and thermal coupling technology, applied in the directions of halogenated silanes, halogenated silicon compounds, fractionation, etc., can solve the problems of reducing energy consumption, lack of differential pressure thermal coupling conditions, and inability to ensure differential pressure thermal coupling, etc., to achieve energy consumption. Low, extended range of effects

Active Publication Date: 2014-07-30
CHINA ENFI ENGINEERING CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] At present, although some tower groups of rectification and purification have adopted differential pressure thermal coupling to reduce energy consumption, they are all in series, which cannot ensure that each tower in the tower group is differential pressure thermally coupled, and some tower groups do not have differential pressure thermal coupling. conditions, so energy consumption cannot be minimized

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  • System for purifying chlorosilane through non-relevant tower differential pressure thermal coupling
  • System for purifying chlorosilane through non-relevant tower differential pressure thermal coupling
  • System for purifying chlorosilane through non-relevant tower differential pressure thermal coupling

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Embodiment

[0062] The polysilicon system includes a crude distillation column group for processing cold hydrogenation materials and a recovery tower for processing high and low boiling points of each group of columns. The feed volume of the crude distillation column group is 60m 3 / h, the feed composition is trichlorosilane 20wt%, dichlorodihydrosilane 2wt%, silicon tetrachloride 78wt%, the material contains some silicon powder, metal compounds and other particulate impurities, and contains a large amount of hydrogen, hydrogen chloride Wait for non-condensable gas; the feed volume of the recovery tower is 35m 3 / h, the feed composition is trichlorosilane 93wt%, dichlorodihydrosilane 3wt%, and silicon tetrachloride 4wt%.

[0063] According to the conventional series differential pressure thermal coupling, the crude distillation column group does not have the conditions for series differential pressure thermal coupling. The crude distillation tower group does not have a series differenti...

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Abstract

The invention discloses a system for purifying chlorosilane through non-relevant tower differential pressure thermal coupling. The system comprises: a first rectifying tower and a second rectifying tower, wherein each of the first rectifying tower and the second rectifying tower has a material inlet, a gas outlet, a liquid outlet, a liquid inlet and a gas inlet; a first reboiler and a second reboiler, wherein each of the first reboiler and the second reboiler has a liquid inlet, a gas outlet, a steam inlet and a condensate liquid outlet; a first reflux pump and a second reflux pump, wherein each of the first reflux pump and the second reflux pump has an inlet and a pump outlet; a first reflux tank and a second reflux tank, wherein each of the first reflux tank and the second reflux tank has a tank inlet and a tank outlet; and a condenser having a gas inlet, a liquid outlet, a cold source inlet and a cold source outlet. Compared with routine serial or parallel differential pressure thermal coupling rectifying towers, the chlorosilane purification system disclosed in the invention can realize the tower differential pressure thermal coupling between / among different tower sets, enlarges the application range of the differential pressure thermal coupling, and solves a problem of high energy consumption of a purifying process of a polysilicon system.

Description

technical field [0001] The invention relates to the field of polysilicon, in particular, the invention relates to a system for purifying chlorosilane with differential pressure thermal coupling of unrelated towers. Background technique [0002] Polysilicon is an ultra-high-purity material used in integrated circuits, electronic devices and solar cells. It is the cornerstone of the information and new energy industries. It is a strategic material that the country encourages and gives priority to development. It is also a product and industry that the country encourages the development of. [0003] In 2012, affected by the global economic crisis and EU anti-dumping measures, the polysilicon market continued to slump. How to reduce polysilicon production costs and how to enhance the core competitiveness of enterprises has become the primary task for the long-term sustainable development of polysilicon enterprises. [0004] At present, the main production method of polysilicon i...

Claims

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Application Information

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IPC IPC(8): C01B33/107B01D3/14
Inventor 姜利霞严大洲杨永亮赵雄肖荣晖汤传斌
Owner CHINA ENFI ENGINEERING CORPORATION
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