Transistor based on multi-top-gate structure

Abstract

The invention discloses a transistor based on a multi-top-gate structure. The transistor comprises a substrate and a dielectric layer located on the substrate. The dielectric layer is provided with a source region, a drain region and a channel region connected between the source region and the drain region. The channel region is connected with at least two top gates, one of the top gates serves as an output pole, and the rest of the top gates serve as input poles. The source region, the drain region and all the top gates are arranged on the lower surface of the dielectric layer in a co-plane mode. The transistor is provided with one or more input poles used for controlling current carriers of the channel region, the voltage of the input poles is changed and the output state of the transistor is controlled, so that one transistor is used for achieving multiple logic outputs, the number of transistors in a logic circuit can be reduced, and the manufacturing method of the logic circuit is simple. The co-plane design of the top gates and a channel is adopted, the size of the transistor is effectively reduced, the integration level of the logic circuit is easily improved, and manufacturing cost is reduced.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a transistor based on a multi-top gate structure. Background technique [0002] A transistor is a solid-state semiconductor device that can be used for detection, rectification, amplification, switching, voltage regulation, signal modulation, and many other functions. As a variable switch, the transistor controls the outgoing current based on the input voltage, so the transistor can be used as a current switch. The difference from general mechanical switches is that the transistor is controlled by electrical signals, and the switching speed can be very fast. The switching speed in the laboratory can reach more than 100GHz. [0003] Transistors can be divided into two main categories: Bipolar Transistors (BJTs) and Field Effect Transistors (FETs). The transistor has three poles; the three poles of the bipolar transistor are the emitter, base and collector co...

AI Technical Summary

Problems solved by technology

[0006] Logic circuits in the traditional sense, in order to realize different logic gate operations, need to use different types, different types, and different numbers of transistors, thereby putting forward higher requirements for the process of making logic circuits in large areas, including using different masks. Stencils, different processes, different materials and different designs, so the manufacturing process is more complicated, and the yield of logic circuits is difficult to guarantee

Images