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Method for removing redeposited polymer of MEMS (micro-electromechanical systems) sensor

A redeposition, polymer technology, applied in the process of producing decorative surface effects, decorative arts, gaseous chemical plating, etc., can solve the problem of removal, redeposit polymer 16 is difficult to etch or peel process, etc., achieve the effect of improving device reliability

Active Publication Date: 2014-08-06
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Obviously, it can be known from the SEM images that serious redeposited polymer 16 occurs after the etching of the tantalum nitride layer 13 of the existing MEMS sensor, and the redeposited polymer 16 is difficult to pass through conventional etching or stripping. process removal

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  • Method for removing redeposited polymer of MEMS (micro-electromechanical systems) sensor
  • Method for removing redeposited polymer of MEMS (micro-electromechanical systems) sensor
  • Method for removing redeposited polymer of MEMS (micro-electromechanical systems) sensor

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Embodiment Construction

[0024] In order to illustrate the technical content, structural features, achieved goals and effects of the present invention in detail, the following will be described in detail in conjunction with the embodiments and accompanying drawings.

[0025] see figure 1 , figure 1 Shown is a flow chart of the method of the present invention for removing redeposited polymer from a MEMS sensor. The method 1 for removing the redeposited polymer of the MEMS sensor comprises:

[0026] Executing step S1: etching the tantalum nitride layer deposited on the silicon-based substrate;

[0027] Executing step S2: performing ashing treatment on the photoresist layer;

[0028] Executing step S3: performing wet stripping on the photoresist layer;

[0029] Executing step S4: performing ion beam etching (Ion Beam Etching, IBE) on the redeposited polymer, the ion beam etching uses Ar ions for bombardment, and the bombardment direction of the Ar ions is the same as that in front of the wafer The a...

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Abstract

A Method for removing redeposited polymer of MEMS (micro-electromechanical systems) sensorcomprises steps as follows: S1, a tantalum nitride layer deposited on a silicon substrate is etched; S2, a photoresist layer is subjected to ashing treatment; S3, the photoresist layer is subjected to wet-process stripping; S4, a redeposited polymer is subjected to ion beam etching; and S5, a Ni Fe layer is subjected to ion beam etching. According to the redeposited polymer removing method for the MEMS sensor, the redeposited polymer is subjected to Ar ion beam etching in an angle alpha which is larger than 0 and smaller than 30 degrees and then the NiFe layer is subjected to Ar ion etching in an angle beta which is larger than 90 degrees and smaller than 150 degrees, so that the redeposited polymer formed in a manufacturing process of the MEMS sensor can be removed effectively, and the reliability of devices can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for removing redeposited polymers of MEMS sensors. Background technique [0002] Micro Electro Mechanical Systems (MEMS) sensors form movable electrode parts and fixed electrode parts by microfabrication of silicon substrates constituting Silicon On Insulator (SOI) substrates. The fine sensor is used as an acceleration sensor, a pressure sensor, a vibratory gyroscope, or a micro relay by the operation of the movable electrode portion. [0003] Please refer to Figure 4(a) and Figure 4(b). Figure 4(a) shows the SEM spectrum of the staged structure of the existing MEMS sensor. Figure 4(b) shows the SEM image of the existing MEMS sensor after etching. The existing MEMS sensor 1 includes a silicon-based substrate 11, a NiFe layer 12, a tantalum nitride layer 13, a silicon nitride layer 14, a photoresist layer 15, and a polymer layer sequentially deposited on the sili...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81C1/00
Inventor 张振兴熊磊
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP