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SOI mini-type Pirani gage and manufacturing method thereof

A Raney gauge and micro-skin technology, which is applied in the field of vacuum degree detection, can solve the problems of low output, complex manufacturing process and high cost, and achieve the effects of fast response, high structural strength and short response time.

Inactive Publication Date: 2014-08-06
NORTHWESTERN POLYTECHNICAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although the linearity of the metal heating body is good, there are still some shortcomings. The manufacturing process is too complicated, and the cost is high and the output is low.

Method used

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  • SOI mini-type Pirani gage and manufacturing method thereof
  • SOI mini-type Pirani gage and manufacturing method thereof
  • SOI mini-type Pirani gage and manufacturing method thereof

Examples

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Embodiment Construction

[0029] The present invention will be further described below in conjunction with the accompanying drawings.

[0030] The SOI structure used in this example is: the device layer 8 is monocrystalline silicon with a thickness of 50 μm; the insulating layer 9 is silicon dioxide with a thickness of 4 μm; the base layer 10 is monocrystalline silicon with a thickness of 500 μm. The angle between the heating body and the vertical direction is 3°, the length of the heating body is 10 mm, the width is 30 μm, and the gap between the comb teeth of the cooling body and the heating body is 5 μm.

[0031] The preparation method of this embodiment comprises the following steps in sequence:

[0032] (1) if image 3 As shown in (1), take a piece of SOI silicon wafer, clean the SOI, and remove the original oxide layer on the surface of the SOI;

[0033] (2) if image 3 As shown in (2), the pattern of the Pirani silicon structure is photoetched; the SOI is subjected to ICP dry etching with an et...

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Abstract

The invention discloses an SOI mini-type Pirani gage, and belongs to the field of vacuum degree detecting of a micro electro mechanical system packaging. A silicon structure of the Pirani gage is manufactured on a device layer 8, and mainly comprises a heating structure and a heat dissipating structure. The heating structure is composed of two heating bodies 5 periodically bending in a trapezoid mode. The heat dissipating structure is composed of two symmetrical side heat dissipating body comb teeth 2 on side faces and a middle heat dissipating body comb tooth 3, and the two side heat dissipating body comb teeth 2 and the middle heat dissipating comb tooth 3 are respectively meshed with the heating bodies 5. The SOI mini-type Pirani gage has the advantages that the heating bodies and anchoring points have four connecting points, and compared with a heating body with the same length, the mechanical strength of the SOI mini-type Pirani gage is enhanced; the technologies such as bonding and depositing are not applied in the technology process, and heating body collapsing and fracturing caused by thermal expansion are avoided; a substrate can serve as a heat dissipating body besides the heat dissipating body in the structure of the device layer, the included angle between the heating bodies and a plane in the vertical direction is 2+ / -1 degrees, heat dissipating is facilitated, and the responding time of the Pirani gage is shortened.

Description

1. Technical field [0001] The invention relates to a miniature Pirani gauge, which belongs to the field of vacuum degree detection packaged by a micro-electromechanical system (MEMS). 2. Background technology [0002] Micro-Electro-Mechanical Systems (hereinafter referred to as MEMS) technology is an emerging multidisciplinary high-tech field. The combination of MEMS and different technologies has produced a large number of new micro devices, such as micro resonators, micro gyroscopes, and micro accelerometers. Most MEMS devices need to be vacuum packaged before use to reduce the air damping in the working environment and improve the quality factor to enhance their performance. However, the vacuum pressure in a general vacuum environment is not equal to the pressure of the vacuum cavity in the MEMS device. Therefore, it is very important to find a method to detect the vacuum degree inside the MEMS device. At the same time, this is also a standard to measure the quality of...

Claims

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Application Information

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IPC IPC(8): G01L21/12B81B7/02B81C1/00
Inventor 苑伟政王伟康任森孙小东陈旭辉
Owner NORTHWESTERN POLYTECHNICAL UNIV
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