Manufacturing method of semiconductor device

Abstract

The present invention discloses a method for manufacturing a semiconductor device. The method includes: providing a substrate, the substrate includes a first device region and a second device region, the first device region has at least one non-volatile memory unit, and the The surface of the first device region around the gate of the nonvolatile memory unit has a first nitride layer formed by preparing the nitrogen wall of the nonvolatile memory unit, and the second device region has a The second device oxide layer and the second device polysilicon layer are sequentially stacked on top; an anti-reflection coating is prepared on the substrate; and the anti-reflection coating and the second device polysilicon layer are selectively etched to form a first second device gate; removing the remaining anti-reflection coating and the first nitride layer. The preparation method of the invention can reduce or avoid damage to devices during the preparation process, thereby improving yield.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for preparing a semiconductor device. Background technique [0002] In order to realize the functionalization of the chip, in the semiconductor manufacturing process, there are often multiple devices on a wafer, and the manufacturing processes of different devices are different, so it is necessary to integrate the manufacturing processes of different devices into the same process (process), resulting in There are many process steps in the same process, such as multi-step deposition or etching processes in the process, which will affect the function of the device. [0003] For example, in the manufacturing process of Electrically Erasable Programmable Read-Only Memory (EEPROM for short), it is necessary to prepare EEPROM storage devices and logic devices on the same wafer. For the preparation process, see Figure 1a-Figure 1g shown. [0004] Firstly, a substrat...

AI Technical Summary

Problems solved by technology

[0010] Since in the prior art, the step of removing the first nitride layer and the step of removing the remaining anti-reflective coating 170 are performed separately, generally the step of removing the first nitride layer and the remaining The step of the anti-reflection coating 170 can adopt dry etching or wet etching, so in the step of removing the first nitride layer and the step of removing the remaining anti-reflection coating 170, the The floating gate transistor and the selection transistor are damaged twice, causing damage to the second high voltage oxide layer 121 or the first high voltage oxide layer 122, or causing damage to the control gate 133 or the selection gate 132, It may even affect the active region on the substrate 110, thereby causing the leakage of the floating gate transistor or the selection transistor, affecting the yield

Images