Mixed plane-bulk heterojunction photosensitive organic field effect transistor

A bulk heterojunction, organic field technology, applied in photovoltaic power generation, electric solid state devices, semiconductor devices, etc., can solve the performance limitations of photosensitive organic field effect transistors and other problems
CN103972387AInactive Publication Date: 2014-08-06LANZHOU UNIVERSITY
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
LANZHOU UNIVERSITY
Publication Date
2014-08-06
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses a method for designing and manufacturing a mixed plane-bulk heterojunction photosensitive organic field effect transistor which comprises a substrate, a grid electrode, a grid medium, an organic carrier transporting layer, an organic bulk heterojunction photosensitive layer, a drain electrode and a source electrode. The organic bulk heterojunction realizes a function of generating photon-generated carriers, and is required to have high photosensitivity or photo-generated carrier generating efficiency rather than high migration rate. The organic carrier transporting layer realizes a function of transporting the photo-generated carriers, and is required to have high migration rate rather than high photosensitivity. By the structure, selection range of organic materials is expanded greatly, generating efficiency of the photo-generated carriers is improved, and organic carrier migration rate is increased, so that performance of the photosensitive organic field effect transistor can be improved effectively.
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Description

technical field

[0001] The invention relates to a method for manufacturing a photosensitive organic field effect tube, belonging to the technical field of solid electronic devices. Background technique

[0002] Compared with photosensitive non-field-effect transistors, photosensitive organic field-effect transistors (photosensitive organic field-effect transistors, photoOFETs) have the advantages of high photoresponsivity, large-area and low-cost manufacturing, and environmentally friendly manufacturing processes. Generally, a photosensitive organic field effect transistor is composed of a substrate, a gate, a gate dielectric, an organic photosensitive layer, a source and a drain. According to the relative position of these parts, the photosensitive organic field effect transistor can adopt four structures: top gate top contact, top gate bottom contact, bottom gate top contact, bottom gate bottom contact, where "contact" refers to the source and drain The electrical connect...

Claims

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