Mixed plane-bulk heterojunction photosensitive organic field effect transistor

A bulk heterojunction, organic field technology, applied in photovoltaic power generation, electric solid state devices, semiconductor devices, etc., can solve the performance limitations of photosensitive organic field effect transistors and other problems

Inactive Publication Date: 2014-08-06
LANZHOU UNIVERSITY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, the improvement of the performance of photosensitive organic field effect transistors with conventional structures is greatly limited

Method used

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  • Mixed plane-bulk heterojunction photosensitive organic field effect transistor
  • Mixed plane-bulk heterojunction photosensitive organic field effect transistor

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Embodiment Construction

[0009] to n + -Si / SiO 2 It is the gate / gate dielectric and also serves as the substrate, copper phthalocyanine (CuPc) is the organic carrier transport layer, palladium phthalocyanine (PdPc): C60 (1:1) is the organic isocyanine Taking the photosensitive layer as an example, the preparation process of the present invention is as follows:

[0010] a) Clean with standard process n + -Si / SiO 2 Substrate;

[0011] b) by vacuum evaporation method in n + -Si / SiO 2 Prepare a layer of copper phthalocyanine film on it;

[0012] c) A bulk heterojunction film of PdPc:C60 (1:1) was prepared on the copper phthalocyanine film by vacuum evaporation. The length of the channel and the area of ​​the source and drain electrodes are defined by a mask.

[0013] d) Prepare high work function metal Au as drain and source by vacuum evaporation method.

[0014] The above description is for carrying out the present invention and its embodiments. Those skilled in the art can determine various im...

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Abstract

The invention discloses a method for designing and manufacturing a mixed plane-bulk heterojunction photosensitive organic field effect transistor which comprises a substrate, a grid electrode, a grid medium, an organic carrier transporting layer, an organic bulk heterojunction photosensitive layer, a drain electrode and a source electrode. The organic bulk heterojunction realizes a function of generating photon-generated carriers, and is required to have high photosensitivity or photo-generated carrier generating efficiency rather than high migration rate. The organic carrier transporting layer realizes a function of transporting the photo-generated carriers, and is required to have high migration rate rather than high photosensitivity. By the structure, selection range of organic materials is expanded greatly, generating efficiency of the photo-generated carriers is improved, and organic carrier migration rate is increased, so that performance of the photosensitive organic field effect transistor can be improved effectively.

Description

technical field [0001] The invention relates to a method for manufacturing a photosensitive organic field effect tube, belonging to the technical field of solid electronic devices. Background technique [0002] Compared with photosensitive non-field-effect transistors, photosensitive organic field-effect transistors (photosensitive organic field-effect transistors, photoOFETs) have the advantages of high photoresponsivity, large-area and low-cost manufacturing, and environmentally friendly manufacturing processes. Generally, a photosensitive organic field effect transistor is composed of a substrate, a gate, a gate dielectric, an organic photosensitive layer, a source and a drain. According to the relative position of these parts, the photosensitive organic field effect transistor can adopt four structures: top gate top contact, top gate bottom contact, bottom gate top contact, bottom gate bottom contact, where "contact" refers to the source and drain The electrical connect...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/00
CPCH10K30/354H10K30/65H10K30/30Y02E10/549
Inventor 彭应全吕文理罗消
Owner LANZHOU UNIVERSITY
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