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Temperature controlled window of a plasma processing chamber component

A technology for plasma and processing chambers, which is applied in the field of temperature-controlled windows for plasma processing chamber components, and can solve the problems of increased heat flux of ceramic windows, aggravated thermal stress, etc.

Active Publication Date: 2014-08-06
LAM RES CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The brittle nature of the ceramic window material places a limit on the RF power used, as the heat flux into the ceramic window increases as the RF power increases
The heat flux causes temperature gradients and thus internal stresses in the ceramic window
Also, the distribution of heat flux can have a highly non-uniform distribution, which exacerbates thermal stress problems

Method used

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  • Temperature controlled window of a plasma processing chamber component
  • Temperature controlled window of a plasma processing chamber component
  • Temperature controlled window of a plasma processing chamber component

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Embodiment Construction

[0020] Time-varying thermal loads are at the heart of semiconductor wafer processing, where heat generation necessarily occurs on a discrete basis (wafer-to-wafer). Spatially varying thermal loads are also common in etch process modules where the density and proximity of the plasma to the part is non-uniform. Also, it is desirable that the components of the plasma processing chamber be at a certain temperature during plasma processing and that these components not be heated by the plasma until wafer processing begins. Circulating the hot liquid allows the first wafer to be processed without the first wafer effect, but as plasma processing continues, the components are heated by the plasma such that the components need to be cooled to the target high temperature, as in the Commonly Accepted Documents, which are hereby incorporated by reference in their entirety. as described in U.S. Published Patent Application No. 2008 / 0308228.

[0021] In one embodiment, as figure 1 As show...

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PUM

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Abstract

A temperature controlled dielectric window of an inductively coupled plasma processing chamber includes a dielectric window forming a top wall of the plasma processing chamber having at least first and second channels therein. A liquid circulating system includes a source of cold liquid circulating in a first closed loop which is not in fluid communication with the channels, a source of hot liquid circulating in a second closed loop which is in fluid communication with the channels, and first and second heat exchangers. The cold liquid passes through the first heat exchanger at a controllable flow rate and temperature of the hot liquid is adjusted by heat exchange with the cold liquid as the hot liquid passes through the first heat exchanger and then through the inlet of the first channel. The cold liquid passes through the second heat exchanger at a controllable flow rate and temperature of the hot liquid is adjusted by heat exchange with the cold liquid as the hot liquid passes through the second heat exchanger and then through the inlet of the second channel.

Description

technical field [0001] The present disclosure relates to temperature control of windows of plasma processing chambers. More specifically, the present disclosure relates to temperature control of windows by circulating heated liquid through channels in the window and individually controlling the temperature of the heated liquid in each channel. Background technique [0002] Plasma processing apparatus is used to process substrates by techniques including etching, physical vapor deposition (PVD), chemical vapor deposition (CVD), ion implantation, and stripping. One type of plasma processing apparatus used in plasma processing includes an inductively coupled plasma (ICP) chamber in the form of one or more RF coils that energize a process gas into a plasma state to process a substrate in the chamber the RF antenna. Due to shrinking feature sizes and the realization of new materials, plasma processing apparatus improvements are required to control the conditions of plasma proce...

Claims

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Application Information

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IPC IPC(8): H05H1/46G05D23/22
CPCH01J37/32119H01J37/32522
Inventor 马特·布舍亚当·梅斯迈克尔·康艾伦·龙尼
Owner LAM RES CORP
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