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Multiple quantum well structure and growth method thereof, and LED chip having the structure

A multi-quantum well structure, LED chip technology, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as low luminous efficiency of LED chips

Active Publication Date: 2016-08-24
XIANGNENG HUALEI OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to provide a multi-quantum well structure, a growth method and an LED chip with the structure, so as to solve the technical problem of low luminous efficiency of the LED chip in the prior art

Method used

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  • Multiple quantum well structure and growth method thereof, and LED chip having the structure
  • Multiple quantum well structure and growth method thereof, and LED chip having the structure
  • Multiple quantum well structure and growth method thereof, and LED chip having the structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0050] The preparation method of the LED chip containing the multi-quantum well structure:

[0051] 1. The hydrogen atmosphere pressure in the reaction chamber is maintained at 150mbar and the sapphire substrate is processed at 1200°C for 10 minutes;

[0052] 2. Lower the temperature to 650°C, maintain the pressure of the reaction chamber at 600mbar, and grow a low-temperature buffer layer GaN with a thickness of 50nm on the sapphire substrate;

[0053] 3. Raise the temperature to 1200°C, maintain the pressure in the reaction chamber at 300mbar, and continue to grow 4μm undoped GaN;

[0054] 4. Then continue to grow N-type GaN doped with Si, the Si doping concentration is 1E+19, and the total thickness is controlled at 4 μm;

[0055] 5. Growth of multi-quantum well structure: (1) The pressure of the reaction chamber is maintained at 400mbar, the low temperature is 750°C, and NH with a flow rate of 60000sccm is introduced at the same time 3 , TEGa with a flow rate of 150 sccm...

Embodiment 2

[0060] The preparation method of the LED chip containing the multi-quantum well structure:

[0061] 1. The hydrogen atmosphere pressure in the reaction chamber is maintained at 100mbar to process the sapphire substrate at 1000°C for 5 minutes;

[0062] 2. Lower the temperature to 550°C, maintain the pressure of the reaction chamber at 400mbar, and grow a low-temperature buffer layer GaN with a thickness of 20nm on the sapphire substrate;

[0063] 3. Raise the temperature to 1000°C, maintain the pressure of the reaction chamber at 150mbar, and continue to grow 2μm undoped GaN;

[0064] 4. Then continue to grow N-type GaN doped with Si, the Si doping concentration is 5E+18, and the total thickness is controlled at 2 μm;

[0065] 5. Growth of multi-quantum well structure: (1) The pressure of the reaction chamber is maintained at 300mbar, the low temperature is 700°C, and NH with a flow rate of 50000sccm is introduced at the same time 3 , TEGa with a flow rate of 100 sccm. The ...

Embodiment 3

[0070] The preparation method of the LED chip containing the multi-quantum well structure:

[0071] 1. The hydrogen atmosphere pressure in the reaction chamber is maintained at 130mbar and the sapphire substrate is processed at 1100°C for 6 minutes;

[0072] 2. Lower the temperature to 570°C, maintain the pressure of the reaction chamber at 500mbar, and grow a low-temperature buffer layer GaN with a thickness of 40nm on the sapphire substrate;

[0073] 3. Raise the temperature to 1100°C, maintain the pressure in the reaction chamber at 180mbar, and continue to grow 3μm undoped GaN;

[0074] 4. Then continue to grow N-type GaN doped with Si, the Si doping concentration is 8E+18, and the total thickness is controlled at 3 μm;

[0075] 5. Growth of multi-quantum well structure: (1) The pressure of the reaction chamber is maintained at 350mbar, the low temperature is 740°C, and NH with a flow rate of 55000sccm is introduced at the same time 3 , TEGa with a flow rate of 140 sccm....

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Abstract

The invention provides a multi-quantum-well structure, a growing method and an LED chip with the structure. The multi-quantum-well structure comprises a plurality of groups of structure units which are overlaid in sequence. Each structure unit comprises a potential well layer and a GaN layer which is formed on the surface of the potential well layer. Each potential well layer comprises at least one gradual-change XGaN layer. The In doping concentration in each gradual-change XGaN layer gradually changes toward the corresponding GaN layer, and X is In or Al. According to the multi-quantum-well structure in the LED chip, the gradual-change XGaN layers with gradual-change In doping content and constant XGaN layers with constant X doping content grow, the two kinds of layers are overlaid and then are used as XGaN layers, so that the distribution center axes of holes and electrons in a multi-quantum well are overlapped, the transition efficiency of the electrons to the holes is improved, and accordingly the light-emitting efficiency of the LED chip is improved.

Description

technical field [0001] The invention relates to the field of LED (light emitting diode), in particular to a multi-quantum well structure, a growth method and an LED chip with the structure. Background technique [0002] In the prior art, in the LED epitaxial layer structure, the luminous efficiency is improved by adding multiple quantum well layers (MQW layers). The existing multi-quantum well layer includes InGaN layers and GaN layers stacked alternately to form an InGaN / GaN superlattice structure. structured as figure 1 As shown, the LED chip includes: the LED chip of the MQW layer includes a sequentially stacked substrate 1' (sapphire or silicon carbide), a buffer GaN layer 2', an undoped GaN layer 3', an N-type confinement layer 4', and an MQW layer Layer 5', P-type confinement layer 6' and Mg-doped GaN layer 7'. Wherein the MQW layer 5' consists of an InGaN layer 51' and a GaN layer 52' ​​stacked on top of each other as a unit. The MQW layer 5' repeats multiple grou...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/06H01L33/00
CPCH01L33/0075H01L33/06
Inventor 张宇
Owner XIANGNENG HUALEI OPTOELECTRONICS
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