Multiple quantum well structure and growth method thereof, and LED chip having the structure

A multi-quantum well structure, LED chip technology, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as low luminous efficiency of LED chips
CN103985797BActive Publication Date: 2016-08-24XIANGNENG HUALEI OPTOELECTRONICS
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
XIANGNENG HUALEI OPTOELECTRONICS
Publication Date
2016-08-24

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Abstract

The invention provides a multi-quantum-well structure, a growing method and an LED chip with the structure. The multi-quantum-well structure comprises a plurality of groups of structure units which are overlaid in sequence. Each structure unit comprises a potential well layer and a GaN layer which is formed on the surface of the potential well layer. Each potential well layer comprises at least one gradual-change XGaN layer. The In doping concentration in each gradual-change XGaN layer gradually changes toward the corresponding GaN layer, and X is In or Al. According to the multi-quantum-well structure in the LED chip, the gradual-change XGaN layers with gradual-change In doping content and constant XGaN layers with constant X doping content grow, the two kinds of layers are overlaid and then are used as XGaN layers, so that the distribution center axes of holes and electrons in a multi-quantum well are overlapped, the transition efficiency of the electrons to the holes is improved, and accordingly the light-emitting efficiency of the LED chip is improved.
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Description

technical field

[0001] The invention relates to the field of LED (light emitting diode), in particular to a multi-quantum well structure, a growth method and an LED chip with the structure. Background technique

[0002] In the prior art, in the LED epitaxial layer structure, the luminous efficiency is improved by adding multiple quantum well layers (MQW layers). The existing multi-quantum well layer includes InGaN layers and GaN layers stacked alternately to form an InGaN / GaN superlattice structure. structured as figure 1 As shown, the LED chip includes: the LED chip of the MQW layer includes a sequentially stacked substrate 1' (sapphire or silicon carbide), a buffer GaN layer 2', an undoped GaN layer 3', an N-type confinement layer 4', and an MQW layer Layer 5', P-type confinement layer 6' and Mg-doped GaN layer 7'. Wherein the MQW layer 5' consists of an InGaN layer 51' and a GaN layer 52' ​​stacked on top of each other as a unit. The MQW layer 5' repeats multiple grou...

Claims

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