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High voltage transistor device and fabrication method

A technology of high-voltage transistors and manufacturing methods, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc.

Inactive Publication Date: 2016-05-25
AMS AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the body is on substrate potential and the drain is on VDD (blocking case), then a voltage in the direction of cut-off appears across the pn junction between body and recess, and a relatively steep pn junction can cause premature breakdown

Method used

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  • High voltage transistor device and fabrication method
  • High voltage transistor device and fabrication method
  • High voltage transistor device and fabrication method

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Embodiment Construction

[0022] figure 1 A portion of a schematic top view of one embodiment of a high voltage transistor device is shown. In this exemplary embodiment, the arrangement of the transistor components is mirror-symmetrical with respect to two orthogonal directions. figure 1 The boundaries of the regions and masks on the upper side 10 of the semiconductor substrate 1 are shown. For example, the recess 2 doped with n-type conduction is located on the upper side 10 in the semiconductor substrate 1 , which has, for example, intrinsic conductivity or a substantial doping for p-type conduction. Conduction types are interchangeable.

[0023] The recess 2 is produced by means of implantation of doping material. The structure of the implant mask 11 with openings 12 applied for this purpose is in figure 1 is schematically shown in and described further below. The body region 3 is arranged in the recess 2 on the upper side 10 of the substrate 1 and has the opposite conductivity type to the rece...

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Abstract

A body region (3) of the first conductivity type is arranged in a recess (2) on the upper side (10) of the substrate (1), wherein the part of the recess not occupied by the body region has a The second conduction type of the opposite type. On the upper side, the source region (4) is arranged in the body region and the drain region (5) is arranged in the recess at a distance from the body region; both source region and drain region Both have a second conductivity type. The body region is arranged below a surface region of the upper side, which has an edge (7) with mutually opposite first edge sides (8). The recesses have different depths in the substrate. The depth of the recess is smaller below the first edge side of the body region than in a portion of the body region spaced apart from the first edge side.

Description

technical field [0001] The present invention relates to a transistor device for high voltage applications, which has improved punch-through voltage and source-drain blocking voltage. Background technique [0002] A high-voltage NMOS transistor isolated from the substrate has a deep n-type recess in the p-type substrate. The body region is embedded in an n-type recess, which is connected to the drain. In normal operation, the highest potential V that can be applied across the body DD . In order that substrate body punchthrough does not occur, a sufficiently high n-doping is introduced between substrate and body. The pn junction between the body and the recess is preferably optimized in terms of electrical properties. If the body is on substrate potential and the drain is on VDD (blocking case), then a voltage in the direction of cut-off appears across the pn junction between body and recess, and a relatively steep pn junction can cause premature breakdown. Studies have ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/266H01L29/06H01L29/78
CPCH01L21/266H01L29/0692H01L29/7816H01L29/0684H01L29/1033H01L29/66477H01L29/78
Inventor 马丁·克奈普
Owner AMS AG
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