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Silicon substrate forward injection method and light emitting device compatible with standard CMOS technology

A light-emitting device and technology, which is applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of high breakdown voltage and DC loss, and achieve high emission optical power, high efficiency optical power density, The effect of improving the external quantum efficiency

Inactive Publication Date: 2014-08-20
TIANJIN UNIV
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  • Claims
  • Application Information

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Problems solved by technology

The above-mentioned devices all adopt the light-emitting mechanism of high-energy hot carriers, which have a large breakdown voltage and DC loss, and are not suitable for combining with integrated circuits (ICs).

Method used

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  • Silicon substrate forward injection method and light emitting device compatible with standard CMOS technology
  • Silicon substrate forward injection method and light emitting device compatible with standard CMOS technology
  • Silicon substrate forward injection method and light emitting device compatible with standard CMOS technology

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Embodiment Construction

[0034] The forward injection light-emitting device proposed by the present invention can improve the above-mentioned deficiencies. Si-LEDs with forward injection light are forward biased, so the operating voltage is very low, which is compatible with VLSI (3.3V) and ULSI (2.5V) power supply voltages, and may also be compatible with Er-doped, FeSi2, dislocation loops ( DL) and other light-emitting mechanisms are compatible and used together. Forward-injected Si-LEDs emit near-infrared light, which is not easily absorbed by bulk silicon itself, which is conducive to obtaining high emitted light power and improving external quantum efficiency. The production and realization of silicon-based light sources with high efficiency and high optical power density will make a major breakthrough in the field of optoelectronic technology and create a new era of silicon-based optical information.

[0035] The object of the present invention is to provide a silicon-based light-emitting devic...

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Abstract

The invention relates to the technical field of silicon substrate light emitting devices, and provides a silicon substrate light emitting device based on the standard CMOS technology. The silicon substrate light emitting device can achieve reverse bias light emitting and forward bias injection light emitting as well, and forward injection light emitting is large in power density and high in efficiency. According to the technical scheme, the silicon substrate forward injection device compatible with the standard CMOS technology is characterized in that a pair of P+ active areas and a pair of n+ active areas are arranged on a light-doped p-type silicon substrate, each pair of active areas occupy one axis, and the two pairs of active areas are distributed in a cross shape; a silicon dioxide electrode oxide layer is arranged above the silicon substrate and the active areas, a through hole is formed in the silicon dioxide electrode oxide layer above the active areas, and after ohmic contact is formed between the active areas and metal through TiSi2 and is led out, a pin is formed through the through hole. The silicon substrate forward injection method and light emitting device are mainly applicable for design and manufacturing of silicon substrate light emitting electronic devices.

Description

technical field [0001] The invention relates to the technical field of silicon-based light-emitting electronic devices, in particular to a silicon-based forward injection light-emitting device compatible with standard CMOS technology. technical background [0002] Among various silicon-based light-emitting device structures, light-emitting device structures compatible with CMOS processes occupy an important position. Although the luminous intensity and conversion efficiency of this device structure are not ideal, due to its compatibility with CMOS technology, it can be fabricated on the same chip with other silicon-based passive optoelectronic devices and microelectronic devices to form an optoelectronic integrated circuit (OEIC). Since high-efficiency silicon-based light-emitting devices (Si-LEDs) and photodetectors are the basis and core of realizing OEIC, with the continuous development of current VLSI and ULSI, such light-emitting devices still have great development pot...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L33/08H01L21/266
CPCH01L21/266H01L33/0054H01L33/08
Inventor 毛陆虹谢荣张世林郭维廉谢生武雷崔猛
Owner TIANJIN UNIV