Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor device and method of fabricating the same

A semiconductor, n-type semiconductor technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems that have not been widely used

Active Publication Date: 2014-09-03
SEOUL VIOSYS CO LTD
View PDF7 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, growing GaN-based compound semiconductor layers on the a-plane or m-plane has many problems to be solved, so it has not been widely used so far.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device and method of fabricating the same
  • Semiconductor device and method of fabricating the same
  • Semiconductor device and method of fabricating the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0079] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following embodiments are provided for illustration purposes only so that those skilled in the art can fully understand the spirit of the present invention. Therefore, the present invention is not limited to the following embodiments, but may be implemented in other forms. In the drawings, the width, length, thickness, etc. of elements are exaggerated for convenience of illustration. Like reference numerals refer to like elements throughout the specification and drawings.

[0080] figure 1 is a cross-sectional view showing a light emitting diode (LED) according to an embodiment of the present invention.

[0081] refer to figure 1 , the LED may include a support substrate 31 , a semiconductor stack 30 , a p-electrode layer 27 , a bonding metal 33 , a transparent oxide layer 35 and an n-electrode pad 37 . The LED may also include bo...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Disclosed are a semiconductor device and a method of fabricating the same. The method includes forming a first GaN layer, a sacrificial layer and a second GaN layer on a GaN substrate, wherein the sacrificial layer has a bandgap narrower than those of the GaN layers; forming a groove penetrating the second GaN layer and the sacrificial layer; growing GaN-based semiconductor layers on the second GaN layer to form a semiconductor stack; forming a support substrate on the semiconductor stack; and removing the GaN substrate from the semiconductor stack by etching the sacrificial layer. Accordingly, since the sacrificial layer is etched using the groove, the support substrate can be separated from the semiconductor stack without damaging the support substrate.

Description

technical field [0001] The present invention relates to a semiconductor device and a method of manufacturing the semiconductor device, and more particularly, to a light emitting diode and a method of manufacturing the same. Background technique [0002] In general, group III nitrides such as gallium nitride (GaN) and aluminum nitride (AlN) have excellent thermal stability and direct transition-type energy band structures, and group III nitrides have recently been used in the visible and ultraviolet regions It is attracting attention as a material for light-emitting devices. In particular, blue and green light-emitting devices using indium gallium nitride (InGaN) have been used in various applications such as large-size full-color flat panel displays, traffic lights, indoor lighting, high-density light sources, high-resolution output systems and optical communication, etc. [0003] Since it is difficult to manufacture a homogeneous substrate on which a Group III nitride sem...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/36H01L33/38H01L33/42H01L33/22
CPCH01L33/22H01L33/32H01L33/38H01L33/0075H01L33/42H01L33/382H01L33/007H01L33/025
Inventor 徐源哲赵大成李贞勋南基范
Owner SEOUL VIOSYS CO LTD