Photodetection element and manufacturing method thereof
A photoelectric detection and manufacturing method technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve problems such as unfavorable batch production and difficulty in realizing package miniaturization, and achieve the effect of realizing batch production and miniaturization
Active Publication Date: 2017-02-15
ODTECH SEMICON NANJING
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[0004] On the other hand, in order to use the photodetection element to detect a specific wavelength, a method of coating a bandpass filter film on the substrate used as a window is adopted, so that the glass, Qurartz or plexiglass substrate equivalent to the window part in the package can only detect to a specific wavelength, but this will make it difficult to miniaturize the package and is not conducive to mass production
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[0036] The photodetection element of the present invention and its manufacturing method will be described in detail below in conjunction with the implementation examples, but the scope of rights of the present invention is not limited to the following implementation examples.
[0037] Figure 1 is a schematic diagram of a photodetection element in an embodiment of the present invention, Figure 2 is a schematic diagram of a photodetection element with a pin junction structure, and Figure 3 is a schematic diagram of a photodetection element with an anti-reflection layer.
[0038] The photodetection element of the present invention is roughly formed by a first conductivity type semiconductor layer (110), a second conductivity type semiconductor layer (140) and a bandpass filter layer (190) as shown in FIG. 1 .
[0039] The first conductive type semiconductor layer (110) and the second conductive type semiconductor layer (140) can form a pn junction.
[0040] The first conductivity...
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The present invention relates to a photodetector capable of miniaturization and mass production and receiving light of a wavelength of 800-900 nm, and to a manufacturing method thereof. The present invention includes a first conductivity type semiconductor layer made of a semiconductor material having first conductivity type; a second conductivity type semiconductor layer which is bonded to the first conductivity type semiconductor layer to form pn junction and is made of a semiconductor material having second conductivity type semiconductor layer; a band pass filter layer which is formed by stacking a dielectric layer of TiO_2 / SiO_2 for reflecting a wavelength of more than 900 nm and a wavelength of less than 800 nm on the second conductivity type semiconductor layer.
Description
technical field [0001] The present invention relates to a photodetection element capable of receiving wavelengths in a specific range and containing a band-pass filter layer capable of miniaturization and mass production and a manufacturing method thereof. Background technique [0002] A photodetector is an element that detects a light signal and converts it into an electrical signal. Such photodetection elements generally have a photoelectric conversion layer structure that converts light energy into electrical energy between two electrodes. [0003] The above-mentioned photodetection elements are widely used in automotive sensors, household sensors, image sensors (image sensors) and solar cells (photovoltaic cells) used in various digital cameras. In addition, in recent years, photodetection elements with excellent selectivity to the wavelength of incident light and a higher ratio of photocurrent to dark current have been developed. [0004] On the other hand, in order t...
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IPC IPC(8): H01L31/0352H01L31/0216H01L31/18
CPCH01L31/02165H01L31/0352H01L31/18Y02P70/50H01L31/1125
Inventor 高成旻姜庚岷赵世珍崔峰敏
Owner ODTECH SEMICON NANJING