Anticorrosive equipment polishing solution

Abstract

The invention discloses an anticorrosive equipment polishing solution, which is characterized by including the following materials by weight: 4-13 parts of sodium chloride, 9-17 parts of fatty alcohol sodium sulfate, 4-10 parts of nano-organic montmorillonite, 1-7 parts of a stearic acid salt, 10-15 parts of polyvinyl alcohol, 9-10 parts of mica powder, 14-23 parts of sodium salicylate, 1-3 parts of paraformaldehyde, 1-2 parts of silver sulfate, 1-2 parts of copper sulfate, 9-13 parts of a molecular sieve, 8-10 parts of diatomite, 3-10 parts of sodium borate, 4-9 parts of methyl silicone oil, and 1-2 parts of hollow glass beads. The chemical mechanical polishing solution provided by the invention can restrain the polishing rate of low dielectric materials, has little influence on the removal rate of copper and silica, and also can reduce the surface pollutants of polished materials.

Description

technical field [0001] The invention relates to a polishing liquid for anticorrosion equipment. Background technique [0002] Due to the high dielectric constant of the traditional dielectric layer material, the capacitance between the conductive layers will increase, which will affect the speed of the integrated circuit and reduce the efficiency. With the complexity and refinement of the integrated circuit, this base material It is increasingly unable to meet the technical requirements of more advanced processes. The introduction of low dielectric materials into the substrate is an inevitable trend in the development of integrated circuit technology, and many polishing slurries for low dielectric materials have been produced. However, none of the low-dielectric material polishing fluids in the prior art has achieved the perfect combination of manufacturing cost and technical performance. Contents of the invention [0003] The technical problem to be solved by the present...

AI Technical Summary

Problems solved by technology

[0002] Due to the high dielectric constant of the traditional dielectric layer material, the capacitance between the conductive layers will increase, which will affect the speed of the integrated circuit and reduce the efficiency. With the complexity and refinement of the integrated circuit, this base material It is increasingly unable to meet the technical requirements of more advanced processes. The introduction of low dielectric materials into the substrate is an inevitable trend in the development of integrated circuit technology, and many polishing slurries for low dielectric materials have been produced.

However, the current low-dielectric material polishing fluids in the prior art have not achieved the perfect combination of manufacturing cost and technical performance.