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Method for preventing tube core table of diode being polluted

A technology of die and mesa, which is applied in the field of diode manufacturing, can solve the problems of long time, many processes, and difficult quality assurance, and achieve the effects of simplifying the production process, reducing production costs, and shortening the production cycle

Inactive Publication Date: 2014-09-24
CHINA ZHENHUA GRP YONGGUANG ELECTRONICS CO LTD STATE OWNED NO 873 FACTORY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The existing protective layer generation method is complicated in process, takes a long time and costs high
Moreover, in the prior art, samples need to be sampled for subsequent processes such as surface metallization → chip splitting → welding → mesa corrosion → mesa passivation in order to detect the breakdown voltage. There are not only the problems of complex process, long time and high cost, but also the problems of many processes and difficult quality assurance

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0011] A method of preventing the diode die table top from being polluted is that the method is to put an appropriate amount of solid paraffin on the die table top after the existing silicon chip "dotting" process forms the die table top, and the paraffin uses the existing White wax with less impurities in the technology; then put the silicon wafer horizontally into the oven to heat, so that the paraffin wax changes from solid to liquid, then flows along the die table and covers the entire die table, and then cuts off the power of the oven, so that the silicon wafer The oven is kept in a horizontal state and cooled naturally until the paraffin re-solidifies into a solid state. The solid paraffin protective layer on the surface of the die table is used to isolate the contact between the die table and the outside air, so as to prevent the die table from being polluted. Said putting an appropriate amount of solid paraffin on the die table, the appropriate amount means that the p...

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PUM

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Abstract

The invention discloses a method for preventing the tube core table of a diode being polluted. The method comprises: after dotting a silicon wafer to form a tube core table, placing certain amount of solid paraffin on the tube core table, horizontally placing the silicon wafer into an oven for heating, after the paraffin is changed to be liquid from solid and then flows along the tube core table to full cover the same, cutting off power supply of the oven, keeping the silicon wafer horizontal in the oven to cool down naturally until the paraffin is solidified again, separating the tube core table from external air by the solid paraffin on the surface of the tube core table, and thereby the purpose of preventing the tube core table being polluted is achieved. The paraffin protection layer is adopted to replace the existing protection layer, so that production process is simplified, production cycle is shortened, and production cost is reduced.

Description

technical field [0001] The invention relates to a method for preventing the mesa of a diode die from being polluted, and belongs to the technical field of diode manufacturing. Background technique [0002] Diode is the most widely used electronic component in the electronics industry. In order to ensure the quality of the diode, it is necessary to perform voltage detection on the diffused silicon wafer during the manufacturing process. The core mesa is the core of the diode. If it is polluted, it will affect the quality of the diode. Therefore, a protective layer needs to be formed on the die mesa to prevent it from being polluted. The existing protective layer generation method has complex process, long time and high cost. Moreover, in the prior art, samples need to be sampled for subsequent processes such as surface metallization → chip splitting → welding → mesa corrosion → mesa passivation in order to detect the breakdown voltage. There are not only the problems of com...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L21/329
CPCB08B17/00
Inventor 袁锟王智姚俊赵志云
Owner CHINA ZHENHUA GRP YONGGUANG ELECTRONICS CO LTD STATE OWNED NO 873 FACTORY