Multi-mode redundancy design method for radiation-resistant sram based on data credibility judgment

Abstract

The invention relates to a radiation-resistant SRAM (Static Random Access Memory) multimode redundancy design method based on data credibility judgment. The method comprises the following steps: forming a multimode redundancy memory system by a plurality of same SRAM memories and a redundant system control circuit; selecting a plurality of data bits from the memory arrays of the SRAM memories in the multimode redundancy memory system as observation bits; storing known data on the observation bits; carrying out periodical inspection of the observation bit in each SRAM memory array by the redundant system control circuit; when the data on the observation bits generate flipping errors, refreshing the data bits in a suspected area around the observation bit which generates the flipping error in the corresponding SRAM memory array; abandoning the data during judgment before refreshing; and after the refreshing is finished, restoring the data of the corresponding observation bit. Redundancy judgment accuracy can be improved, the data error rate of each memory is lowered, and finally, the integral performance of the multimode redundancy memory system can be improved.

Description

technical field [0001] The invention relates to the technical field of radiation-resistant design of integrated circuits, in particular to a radiation-resistant SRAM multi-mode redundancy design method based on data credibility judgment. Background technique [0002] The impact mechanism of radiation on integrated circuits is divided into total dose effect and single event reversal effect. The total dose effect means that after the chip receives the accumulated radiation, the gate oxide layer of the MOS device accumulates charges and defects, which degrades the performance of the MOS tube and leads to the failure of the circuit function; the single event reversal effect is that high-energy particles pass through the source and drain regions of the MOS tube At the same time, many electron-hole pairs collide along the track, and the electrons or holes are collected into the source or drain region under the action of the electric field in the depletion region at the edge of the...

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Problems solved by technology

However, in a strong radiation environment, errors may occur in five or more data samples at the same time. At this time, the redundant system will make a wrong judgment. The error probability of the redundant system is positively related to the error probability of a single memory data. The greater the error probability of the memory data, the higher the possibility of the redundant system making a misjudgment

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