GaAs photoelectric cathode activation process

A photocathode and process technology, applied in cold cathode manufacturing, electrode system manufacturing, circuits, etc., can solve the problems of sensitivity, stability, noise, life and yield gap of the three generations of microlight tubes, and achieve short activation time, High sensitivity and damage prevention effect

Inactive Publication Date: 2014-10-22
SICHUAN TIANWEI ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

After more than ten years of development, China has made great progress in the research of NEA photocathode, but there is still a big gap between the three generations of micro-light tubes compared with foreign countries in terms of sensitivity, stability, noise, life and yield.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] The GaAs photocathode activation process includes Cs source activation and O source activation. During the activation process, the Cs source activation is performed continuously, and the O source activation is performed intermittently: during the activation process, the Cs source is always on, and in the Continuously measure the photocurrent change during the activation process, turn on the O source activation when the photocurrent reaches the peak value, and stop the O source activation when the photocurrent reaches a new peak value;

[0017] Repeat the above process until the photocurrent no longer rises.

[0018] Compared with the traditional Cs source and O source alternate intermittent activation process, the continuous Cs source and O source intermittent activation method has fewer cycles of Cs source and O source, and is more effective in obtaining a cathode with higher sensitivity and better stability. At the same time, the activation time is short; the Cs sourc...

Embodiment 2

[0020] This embodiment is further limited on the basis of Embodiment 1. In order to further optimize the activation effect or obtain a better quality photocathode, the activation process is performed at a vacuum degree of 10 -7 Pa to 10 -6 It is carried out under the vacuum environment of Pa.

[0021] Before the activation process, a photocathode chemical cleaning step is also included, and the chemical cleaning step includes ultrasonic cleaning and chemical etching performed in sequence;

[0022] The ultrasonic cleaning includes sequential carbon tetrachloride, acetone, absolute ethanol, and deionized water ultrasonic cleaning, and the cleaning time is not less than 3 minutes;

[0023] The chemical etching is chemical etching using a mixture of concentrated sulfuric acid, hydrogen peroxide, and deionized water in a ratio of 2:3:2.

[0024] The chemical etching time is in the range of 5min-7min, and the etching temperature is between 25°C-32°C.

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Abstract

The invention discloses a GaAs photoelectric cathode activation process which comprises Cs source activation and O source activation. In the activation process, the Cs source activation is performed continuously, the O source activation is performed discontinuously; in the activation process, a Cs source is always in an open state and continuously measures photocurrent changes in the activation process, O source activation is started when a photocurrent reaches a peak value, and O source activation is stopped after the photocurrent has a new peak value; and the process is repeated until the photocurrent no longer rises. The time for activation is short according to the process, the activation is favorable for avoiding the damage to a cathode caused by excess of an O source, and the high-quality GaAs photoelectric cathode is obtained.

Description

technical field [0001] The invention relates to a micro-lamp production process for illumination or indication, in particular to a GaAs photocathode activation process. Background technique [0002] Negative electron affinity (NEA) photocathode has the advantages of wide spectral response range, high sensitivity, small dark emission, concentrated energy distribution and angular distribution of emitted electrons, and great potential for long-wave response expansion. It is widely used in vehicles, airborne and individual soldiers. At the same time, as a high-performance spin electron source, NEA photocathode has also been widely used in the fields of high-energy physics, microelectronics technology, electron beam lithography, and electron microscopy. After more than ten years of development, China has made great progress in the research of NEA photocathode, but there is still a big gap between the three generations of micro-light tubes compared with foreign countries in terms ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J9/02
Inventor 白辉李继良
Owner SICHUAN TIANWEI ELECTRONICS
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