Laser annealing method
A technology of laser annealing and laser beam, which is applied in the direction of laser welding equipment, electrical components, welding/welding/cutting items, etc., can solve the problems of machine weight, high maintenance cost, and large work area occupied by the machine, and reduce machine Reduce the weight of the table, reduce the possibility of amorphous silicon oxidation, and improve the effect of electrical properties
Inactive Publication Date: 2014-10-29
EVERDISPLAY OPTRONICS (SHANGHAI) CO LTD
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Problems solved by technology
Since the machine cavity 101 used has a certain volume, and gas pipelines need to be arranged in addition, the machine occupies a large working space, the machine is relatively heavy, and the maintenance cost is relatively high
Method used
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[0023] The present invention will be further described below in combination with principle diagrams and specific operation examples.
[0024] In a preferred embodiment of the laser annealing method of the present invention, a laser annealing device is used to scan the surface of the semiconductor structure on a substrate 1, such as image 3 As shown, the laser annealing device includes a laser source 2 and an optical device 3, the laser annealing device can be placed on a machine, and the machine is not provided with an internal cavity.
[0025] see figure 2 Shown, this laser annealing step comprises:
[0026] The laser source 2 provides a laser beam O. In a preferred embodiment of the present invention, the wavelength of the laser beam O is an ultrashort-wave laser of 532nm, and may also be an ultrashort-wave laser of other wavelengths such as 527nm or 523nm.
[0027] The laser beam 0 is projected on a mirror 4, the mirror 4 is a reflective mirror with a flat surface, the ...
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Abstract
The present disclosure discloses a method of laser annealing process, wherein the surface of the semiconductor structure on a substrate is scanned by a laser annealing device, and the said laser annealing device comprises a laser source and the optical instruments. The invention comprises the following steps: generating a laser beam by the laser source, and the laser beam is irradiating on a mirror, the route thereof changed by 90 degrees and converging the laser beam by the optical instrument thereafter. By this method, an improved annealing process which saved the chamber, reduced the likelihood of the oxidation of silicon film in the annealing process, improved the electrical property of silicon substrate, reduced the weight of machine and further simplified the maintenance machine.
Description
technical field [0001] The invention relates to laser annealing technology, in particular to a laser annealing method for annealing amorphous silicon with laser to improve electrical properties of polysilicon transformed from amorphous silicon. Background technique [0002] The existing amorphous silicon is converted into polysilicon, generally using high-temperature furnace annealing or excimer laser system annealing, the heating time is too long to cause the silicon film to oxidize, and it is necessary to use a very large cavity filled with nitrogen, such as US patent US6027960 ( Laser annealing method and laser annealing device) is to irradiate the amorphous silicon with an excimer laser with a wavelength of 308nm, such as figure 1 As shown, the amorphous silicon on the surface of the substrate becomes polysilicon after undergoing a tempering process, wherein the substrate needs to be placed on a machine in a cavity 101, and at the same time, the cavity 101 is filled with...
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IPC IPC(8): H01L21/02H01L21/268
CPCH01L21/02686B23K26/0006B23K26/354B23K2103/56H01L21/02532H01L21/268
Inventor 江昌翰叶昱钧钟尚骅
Owner EVERDISPLAY OPTRONICS (SHANGHAI) CO LTD