Metal ion source and vacuum coating system

A metal ion source and cooling system technology, applied in the direction of ion implantation plating, vacuum evaporation plating, metal material coating technology, etc., can solve the problem of unstable discharge, large difference in ionization rate of deposited particles, low deposition rate, etc. problem, to achieve the effect of increasing the density of the extracted beam

Active Publication Date: 2014-11-05
PEKING UNIV SHENZHEN GRADUATE SCHOOL
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Problems solved by technology

However, high-power pulsed magnetron sputtering works in the abnormal glow discharge stage close to arc discharge, and the discharge is very unstable, and occasionally "arcing" will also cause "metal droplets" to splash
Secondly, for different target materials, the ionization rate of the deposited particles varies greatly, and it i

Method used

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  • Metal ion source and vacuum coating system
  • Metal ion source and vacuum coating system
  • Metal ion source and vacuum coating system

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Embodiment

[0029] The source of metal ions in this example, such as figure 1 As shown, it includes a casing 11, a magnetic element 12, a copper sleeve 13, a magnetron target 14, an arc extinguishing cover 15, a cooling system 16, a magnetic steel 17, a mesh-shaped extraction grid 18, and a positive electrode 19 for an extraction electric field; the casing 11 is Hollow cylindrical shape; magnetic steel 17, cooling system 16, copper sleeve 13 and magnetron target 14 are sequentially stacked in the shell 11, and none of them are connected to the shell 11; magnetron target 14 is embedded in the copper sleeve 13 , the magnetic element 12 is evenly inlaid on the magnetic steel 17; the arc extinguishing cover 15 is fixed on both ends of the cylindrical shell, and the magnetic steel 17, the cooling system 16, the copper sleeve 13 and the magnetic The two ends of the control target 14 are wrapped, and there is a gap between the arc extinguishing cover 15 and the magnetic element 12, the copper sl...

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Abstract

The invention discloses a metal ion source and a vacuum coating system. In the metal ion source, a magnetic-control target is designed into a cylinder shape and is mounted in an outer shell of the cylinder; magnetic components and a cooling system are correspondingly mounted in the outer shell, and a leading-out gate is used for leading out an ion beam flow. In the metal ion source, magnetic-control discharge is relatively closed in the cylinder; when in work, the leading-out gate is used for leading out the ion beam flow, 100% of the ion beam flow can be led out, and the beam flow does not contain 'metal droplets'; at the same time, the target surface area is far greater than the led-out beam flow area, and the led-out beam flow density is greatly improved, so that the vacuum coating system has the superiorities of no need of a filter device, fast deposition or large-dose injection, and can be used for fast routine 'beam linear' thin film deposition or large-dose high-energy ion injection.

Description

technical field [0001] The application relates to the field of ion coating, in particular to a metal ion source and a vacuum coating system. Background technique [0002] The development of metal ion sources first began in 1982. I.G.Brown of the Berkeley Lawrence National Laboratory in the United States first designed the metal vapor arc ion source, commonly known as the MeVVA source, and started implantation and film deposition based on metal ions (BrownIG.Metalvaporvacuumarcionsource . Rev. Sci. Instrum., 1986, 57(6): 1069-1084). Subsequently, metal ion implantation and deposition technology was widely used in industrial engineering fields such as tools, molds, and mechanical protection, semiconductors, thin-film solar cells, lithium batteries, and daily life such as mobile phones, watches, and lighting, reflecting huge market value. [0003] However, the MeVVA source structure is relatively complex, and it is developed based on the principle of vacuum arc discharge. Due ...

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Application Information

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IPC IPC(8): C23C14/35
Inventor 吴忠振潘锋
Owner PEKING UNIV SHENZHEN GRADUATE SCHOOL
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