Metal ion source and vacuum coating system

Abstract

The invention discloses a metal ion source and a vacuum coating system. In the metal ion source, a magnetic-control target is designed into a cylinder shape and is mounted in an outer shell of the cylinder; magnetic components and a cooling system are correspondingly mounted in the outer shell, and a leading-out gate is used for leading out an ion beam flow. In the metal ion source, magnetic-control discharge is relatively closed in the cylinder; when in work, the leading-out gate is used for leading out the ion beam flow, 100% of the ion beam flow can be led out, and the beam flow does not contain 'metal droplets'; at the same time, the target surface area is far greater than the led-out beam flow area, and the led-out beam flow density is greatly improved, so that the vacuum coating system has the superiorities of no need of a filter device, fast deposition or large-dose injection, and can be used for fast routine 'beam linear' thin film deposition or large-dose high-energy ion injection.

Description

technical field [0001] The application relates to the field of ion coating, in particular to a metal ion source and a vacuum coating system. Background technique [0002] The development of metal ion sources first began in 1982. I.G.Brown of the Berkeley Lawrence National Laboratory in the United States first designed the metal vapor arc ion source, commonly known as the MeVVA source, and started implantation and film deposition based on metal ions (BrownIG.Metalvaporvacuumarcionsource . Rev. Sci. Instrum., 1986, 57(6): 1069-1084). Subsequently, metal ion implantation and deposition technology was widely used in industrial engineering fields such as tools, molds, and mechanical protection, semiconductors, thin-film solar cells, lithium batteries, and daily life such as mobile phones, watches, and lighting, reflecting huge market value. [0003] However, the MeVVA source structure is relatively complex, and it is developed based on the principle of vacuum arc discharge. Due ...

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Problems solved by technology

However, high-power pulsed magnetron sputtering works in the abnormal glow discharge stage close to arc discharge, and the discharge is very unstable, and occasionally "arcing" will also cause "metal droplets" to splash

Secondly, for different target materials, the ionization rate of the deposited particles varies greatly, and it is difficult to obtain a 100% ionized beam

In addition, due to the low voltage potential of the target, the ionized sputtering material ions are sucked back to the target surface under the action of the electric field, resulting in a low deposition rate. Obviously, there are obstacles to the industrial application of this ion source

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