Full-transparent film voltage controlled varactor and preparation method thereof

A varactor, fully transparent technology, used in voltage-variable capacitors, ion implantation plating, coatings, etc., to achieve the effects of high transparency, good device stability, and high tuning rate

Inactive Publication Date: 2014-11-05
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, if transparent electrodes and substrates are selected, it will be possible to experiment with fully transparent voltage-controlled varactors, and may be integrated in future visual electronic devices

Method used

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  • Full-transparent film voltage controlled varactor and preparation method thereof
  • Full-transparent film voltage controlled varactor and preparation method thereof
  • Full-transparent film voltage controlled varactor and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] (1) Preparation of Ba by solid phase sintering method 0.6 Sr 0.4 TiO 3 Target and ITO target

[0040] Press Ba with electronic balance 0.6 Sr 0.4 TiO 3 The stoichiometric ratio of the corresponding elements weighs BaCO with a purity of 99%. 3 , SrCO 3 and TiO 2 , after being fully mixed, pressed and formed under a pressure of 30Mpa, and finally placed in a box-type electric furnace and gradually heated to 1450 ° C, and kept for 10 hours to obtain Ba 0.6 Sr 0.4 TiO 3 target;

[0041] Press Sn with electronic balance 0.03 In 0.97 O, the stoichiometric ratio of the corresponding elements Weigh SnO with a purity of 99.99% 2 and In 2 o 3 , after being fully mixed, pressed and formed under a pressure of 30Mpa, and finally placed in a box-type electric furnace and gradually heated to 1150°C, and kept for 10 hours to obtain an ITO ceramic target.

[0042] (2) The quartz glass substrate is ultrasonically cleaned with acetone, ethanol and deionized water, and cleane...

Embodiment 2

[0052] (1) Preparation of Ba by solid phase sintering method 0.3 Sr 0.7 TiO 3 Target and ITO target

[0053] Press Ba with electronic balance 0.3 Sr 0.7 TiO 3 The stoichiometric ratio of the corresponding elements weighs BaCO with a purity of 99%. 3 , SrCO 3 and TiO 2 , after being fully mixed, pressed and formed under a pressure of 30Mpa, and finally placed in a box-type electric furnace and gradually heated to 1450 ° C, and kept for 10 hours to obtain Ba 0.3 Sr 0.7 TiO 3 target;

[0054] Press Sn with electronic balance 0.03 In 0.97 O, the stoichiometric ratio of the corresponding elements Weigh SnO with a purity of 99.99% 2 and In 2 o 3 , after being fully mixed, pressed and formed under a pressure of 30Mpa, and finally placed in a box-type electric furnace and gradually heated to 1150°C, and kept for 10 hours to obtain an ITO ceramic target.

[0055] (2) The quartz glass substrate is ultrasonically cleaned with acetone, ethanol and deionized water, and clea...

Embodiment 3

[0064] (1) Preparation of Ba by solid phase sintering method 0.7 Sr 0.3 TiO 3 Target and ITO target

[0065] Press Ba with electronic balance 0.7 Sr 0.3 TiO 3 The stoichiometric ratio of the corresponding elements weighs BaCO with a purity of 99%. 3 , SrCO 3 and TiO 2 , after being fully mixed, pressed and formed under a pressure of 30Mpa, and finally placed in a box-type electric furnace and gradually heated to 1450 ° C, and kept for 10 hours to obtain Ba 0.7 Sr 0.3 TiO 3 target;

[0066] Press Sn with electronic balance 0.03 In 0.97 O, the stoichiometric ratio of the corresponding elements Weigh SnO with a purity of 99.99% 2 and In 2 o 3 , after being fully mixed, pressed and formed under a pressure of 30Mpa, and finally placed in a box-type electric furnace and gradually heated to 1150°C, and kept for 10 hours to obtain an ITO ceramic target.

[0067] (2) The quartz glass substrate is ultrasonically cleaned with acetone, ethanol and deionized water, and clea...

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Abstract

The invention discloses a full-transparent film voltage controlled varactor and a preparation method thereof. An ITO (Indium Tin Oxide) film (2), a BST (Barium Strontium Titanate) film (3) and an ITO electrode (4) are sequentially arranged on a glass substrate (1); a chemical formula of the ITO film (2) is SnxIn1-xO; x is greater than 0.02 and less than 0.04; a chemical formula of the BST film (3) is BaxSr1-xTiO3; and x is equal to 0.3-0.7. The preparation method comprises the steps of depositing a bottom electrode ITO film layer, a middle BaxSr1-xTiO3 adjustable dielectric layer (the BST film) and a top electrode ITO layer on the glass substrate by a magnetron sputtering deposition method. The transmittance of the voltage controlled varactor is greater than or equal to 70%; a tuning rate is greater than or equal to 40% (100KHz); the stability of a device is good; and an excellent electronic component basis is provided for development and application of transparent communication and display equipment.

Description

technical field [0001] The invention relates to electronic information materials and components, in particular to a fully transparent Ba x Sr 1-x TiO 3 Thin-film voltage-controlled varactor and its preparation method. Background technique [0002] Microwave electronic systems are developing in the direction of broadband, high capacity, and smaller volume, and the demand for integrated, high-performance microwave components is increasingly urgent. Dielectrically tunable materials have dielectric nonlinear characteristics that the dielectric constant changes with the change of the applied electric field. Using this characteristic, the frequency, phase, and amplitude of microwave signals can be modulated to make voltage-controlled microwave devices, such as phase shifters, auto- Suitable for matching network, electronically adjustable filter, voltage controlled oscillator, electronically controlled attenuator, microwave switch, limiter, etc. Dielectric voltage-controlled mi...

Claims

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Application Information

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IPC IPC(8): H01G7/06C23C14/35C23C14/06C23C14/08C23C14/04
Inventor 李玲霞于仕辉董和磊许丹金雨馨
Owner TIANJIN UNIV
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