Materials for controlling the epitaxial growth of photoactive layers in photovoltaic devices

A device and photosensitive layer technology, applied in the field of organic solar cells, can solve the problems of high cost, difficult production, and stability of amorphous silicon devices.

Inactive Publication Date: 2014-11-05
RGT UNIV OF MICHIGAN +1
View PDF12 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, producing high-efficiency crystal-based devices, especially those with large surface areas, is difficult and expensive due to problems inherent in producing large crystals without significant efficiency-reducing defects.
On the other hand, high-efficiency amorphous silicon devices still have stability issues

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Materials for controlling the epitaxial growth of photoactive layers in photovoltaic devices
  • Materials for controlling the epitaxial growth of photoactive layers in photovoltaic devices
  • Materials for controlling the epitaxial growth of photoactive layers in photovoltaic devices

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0100] Two OPVs were fabricated as described above, one with and one without HAT-CN buffer layer. Figure 9 The dark current density (JD)-voltage and photocurrent density (JPH)-voltage characteristics of the corresponding OPVs are shown. Using the HAT-CN buffer layer increases the OPV dark current density at V>0, while the JD at V2 Enhanced to 4.6±0.05mA / cm 2 , but it is more significant to increase ff from 50%±2% to 62%±1%. Using the HAT-CN as a modeling buffer increased the PCE from 1.1%±0.1% to 1.4%±0.1% due to the increase in Jsc and ff without any significant change in Voc.

[0101] The detailed data of the HAT-CN modified OPVs are summarized in Table I. The fill factor (ff) is generally determined by the combination of series resistance and parallel resistance of the OPV. From the slope of the forward-biased JPH-V characteristic, it is evident that the decrease in series resistance is responsible for the increase in ff. Specifically, the areal series resistance calcu...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
current densityaaaaaaaaaa
Login to view more

Abstract

There is disclosed ultrathin film material templating layers that force the morphology of subsequently grown electrically active thin films have been found to increase the performance of small molecule organic photovoltaic (OPV) cells. There is disclosed electron-transporting material, such as hexaazatriphenylene-hexacarbonitrile (HAT-CN) can be used as a templating material that forces donor materials, such as copper phthalocyanine (CuPc) to assume a vertical-standing morphology when deposited onto its surface on an electrode, such as an indium tin oxide (ITO) electrode. It has been shown that for a device with HAT-CN as the templating buffer layer, the fill factor and short circuit current of CuPc:C60 OPVs were both improved compared with cells lacking the HAT-CN template. This is explained by the reduction of the series resistance due to the improved crystallinity of CuPc grown onto the ITO surface.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of US Provisional Application No. 61 / 393,732, filed October 15, 2010, which is hereby incorporated by reference in its entirety. [0003] Statement Regarding Federally Funded Research [0004] This invention was made with United States Government support under Contract No. DE-SC00000957 awarded by the United States Department of Energy. The US Government has certain rights in this invention. [0005] joint research agreement [0006] The subject matter of this application has been made by, on behalf of, and / or in collaboration with one or more of the following parties under a joint university-company research agreement: University of Michigan, Dankook University and Global Photonic Energy Corporation. The agreement was in effect on and before the date the invention was made, and it was as a result of actions taken within the scope of the agreement that the claimed invention was ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/00
CPCB82Y10/00H01L51/4246H01L51/424H01L51/001H01L51/0012H01L51/4253H01L51/0046H01L51/0072Y02E10/549H10K71/191H10K71/164H10K85/211H10K85/6572H10K30/211H10K30/20H10K30/30Y02P70/50H10K99/00H10K30/00
Inventor 斯蒂芬·R·弗里斯特布莱恩·E·拉希特李俊烨陆庚修田顺玉陈炳斗
Owner RGT UNIV OF MICHIGAN
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap