Low-loss high-stability high-intermodulation dual-frequency 4G combiner
A high stability, high intermodulation technology, applied in the direction of circuits, waveguide devices, electrical components, etc., can solve the problems of bulky, complex structure, difficult processing, etc., to achieve high power capacity, high intermodulation, signal transmission Unobstructed effect
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment Construction
[0010] like figure 1 , 2 As shown, a low-loss, high-stability, high-intermodulation dual-frequency 4G combiner includes a resonant cavity 1, a cover plate 2 is fixed on the top of the resonant cavity 1, and a silver layer 3 is electroplated on the inside of the resonant cavity 1. Antenna port N-type connector one 4 is installed on the left side of cavity 1, GSM, DCS port N-type connector two 5 and TDA, TDF, LTE port N-type connector three 6 are installed on the right side of resonant cavity 1. The interior of the resonant cavity 1 is installed with multiple mutually coupled GSM signal high-power resonance capacitors 7, DCS signal high-power resonance capacitors 8, TDA signal high-power resonance capacitors 9, TDF signal high-power resonance capacitors 10, and LTE signal high-power resonance capacitors 11 and out-of-band stray signal near-end and far-end suppression control elements 12, all high-power resonant capacitors are distributed in six rows in the resonant cavity, ...
PUM
Login to View More Abstract
Description
Claims
Application Information
Login to View More 