Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Width measurement method

A measurement and width technology, applied in semiconductor/solid-state device testing/measurement, electrical components, circuits, etc., can solve problems such as unrecorded EBR/WEE width technical characteristics, achieve high repeatability, reduce errors, and simple principle Effect

Inactive Publication Date: 2014-11-26
WUHAN XINXIN SEMICON MFG CO LTD
View PDF5 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The above patents do not record the technical features related to the measurement of EBR / WEE width

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Width measurement method
  • Width measurement method
  • Width measurement method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments, but not as a limitation of the present invention.

[0023] The present invention provides a method for measuring the width, and the method is used for photoresist thickness measurement because the width of EBR and WEE is a key process parameter in the semiconductor lithography process, and WEE (wafer edge exposure) is the In one step, use exposure light to expose the excess PR (positive photoresist) on the edge, and then develop the PR on the edge. After the positive photoresist is exposed, acidic substances will be produced, which will be removed by reaction with an alkaline developer. The length is about 2MM. And EBR (edge ​​bead removal) is at the coater (coater), when the PR is applied, it is washed off with the nozzle (nozzle). The advantage of edge washing is that in general, the thickness of the PR on the edge of the wafer will be thicker. ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the field of semiconductor defect analysis, in particular to a width measurement method. The width measurement method is applied to the EBR / WEE area of a measurement and photolithographic technology. The method includes the steps that firstly, a plurality of thickness measurement points are selected from an EBR / WEE junction area, then the thickness measurement points are measured, and the distance between the first measurement point with the thickness reaching the normal value and the crystal edge is calculated according to the position coordinate of the first measurement point, wherein the distance is the measurement value of the EBR / WEE within the selected area. The width measurement method is easy to operate and low in operability, the result repeatability of the two sides is high, errors are small, and measurement results can be controlled by a statistical process control system in real time.

Description

technical field [0001] The invention relates to the field of semiconductor defect analysis, in particular to a method for measuring width. Background technique [0002] In the semiconductor lithography process, the width of the EBR and WEE of the Track machine is a key process parameter. Usually, we use a manual method to obtain the measurement value through a machine scale under a microscope. This method of measurement is more complicated. , It is necessary to manually confirm the measurement position of the crystal edge on the microscope machine, and limited by the directionality of the measurement scale, it can only measure the width values ​​​​in the direction of 3, 9, and 12 o'clock. Due to the manual definition of the measurement start position, Due to the large error in the judgment of the gray level of the wafer boundary, the measurement result often has a large error, and the data read by humans cannot be automatically uploaded to the system, and the purpose of SPC ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/66
CPCH01L22/12
Inventor 刘智敏
Owner WUHAN XINXIN SEMICON MFG CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com