MEMS gas sensor and manufacturing method thereof
A technology of gas sensor and manufacturing method, which is applied in the direction of electric solid-state devices, semiconductor devices, instruments, etc., can solve the problems of affecting the heat insulation effect, deformation and rupture of devices, and rapid heat loss, etc., so as to solve heat loss, improve shock resistance and stability performance, enhance the effect of heat insulation
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Embodiment 1
[0031] Example 1: figure 1 It is a structural schematic diagram of the MEMS gas sensor of the present invention, and it can be clearly seen from the figure that the MEMS gas sensor of the present invention includes: a single crystal silicon substrate 1; a porous silicon layer 2, which is formed on the surface of the single crystal silicon substrate 1 The upper surface has a thickness downward, and a silicon dioxide film is formed on the upper surface and the surface of the hole wall of the porous silicon layer 2; the heat insulating groove 3 is formed on the lower surface of the single crystal silicon substrate 1, and the heat insulating The groove 3 is an undercut groove, the bottom surface of the heat insulating groove 3 is located directly below the porous silicon layer 2, and the wall and bottom surface of the heat insulating groove 3 are provided with one or more groove groups, wherein each groove group includes A plurality of trenches 31 arranged in parallel; the lower i...
Embodiment 2
[0050] Example 2: figure 1 It is a structural schematic diagram of the MEMS gas sensor of the present invention, and it can be clearly seen from the figure that the MEMS gas sensor of the present invention includes: a single crystal silicon substrate 1; a porous silicon layer 2, which is formed on the surface of the single crystal silicon substrate 1 The upper surface has a thickness downward, and a silicon dioxide film is formed on the upper surface and the surface of the hole wall of the porous silicon layer 2; the heat insulating groove 3 is formed on the lower surface of the single crystal silicon substrate 1, and the heat insulating The groove 3 is an undercut groove, the bottom surface of the heat insulating groove 3 is located directly below the porous silicon layer 2, and the wall and bottom surface of the heat insulating groove 3 are provided with one or more groove groups, wherein each groove group includes A plurality of trenches 31 arranged in parallel; the lower i...
Embodiment 3
[0069] Example 3: figure 1 It is a structural schematic diagram of the MEMS gas sensor of the present invention, and it can be clearly seen from the figure that the MEMS gas sensor of the present invention includes: a single crystal silicon substrate 1; a porous silicon layer 2, which is formed on the surface of the single crystal silicon substrate 1 The upper surface has a thickness downward, and a silicon dioxide film is formed on the upper surface and the surface of the hole wall of the porous silicon layer 2; the heat insulating groove 3 is formed on the lower surface of the single crystal silicon substrate 1, and the heat insulating The groove 3 is an undercut groove, the bottom surface of the heat insulating groove 3 is located directly below the porous silicon layer 2, and the wall and bottom surface of the heat insulating groove 3 are provided with one or more groove groups, wherein each groove group includes A plurality of trenches 31 arranged in parallel; the lower i...
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