Simulation technique based semiconductor device TDDB (time dependent dielectric breakdown) failure testing method

A semiconductor and device technology, applied in the field of TDDB failure testing of semiconductor devices based on simulation technology, can solve the problems of impurity diffusion, pre-test preparation time of expensive test equipment, diffusion into silicon substrate or fixed in silicon dioxide, etc. Time and cost saving effect

Inactive Publication Date: 2014-12-03
CHINA AERO POLYTECH ESTAB
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Problems solved by technology

However, as the size of the device continues to shrink, the following problems arise: (1) the increase of the gate leakage current, as the thickness of the silicon dioxide film decreases, the gate leakage current will increase; (2) the impurity diffusion, the gate There is an impurity concentration gradient betw

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  • Simulation technique based semiconductor device TDDB (time dependent dielectric breakdown) failure testing method
  • Simulation technique based semiconductor device TDDB (time dependent dielectric breakdown) failure testing method
  • Simulation technique based semiconductor device TDDB (time dependent dielectric breakdown) failure testing method

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Embodiment Construction

[0022] The technical solution of the present invention will be described in further detail below in conjunction with the accompanying drawings:

[0023] Taking "CD4011B" as an example below, the TDDB failure test method for semiconductor devices based on simulation technology described in the present invention is introduced. figure 1 As shown, the steps of this method are:

[0024] Step 1: Collect the known information of "CD4011B", including:

[0025] a) "CD4011B" internal transistor level circuit diagram;

[0026] b) "CD4011B" internal transistor gate oxide breakdown activation energy, electric field breakdown coefficient and electric field acceleration factor;

[0027] c) "CD4011B" internal transistor gate oxide layer thickness;

[0028] d) "CD4011B" internal transistor channel design length, effective width, source area, drain area and other information;

[0029] e) The typical application circuit of the device provided by the "CD4011B" manufacturer, which includes the...

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Abstract

The invention belongs to the technical field of failure testing, and relates to a simulation technique based semiconductor device TDDB (time dependent dielectric breakdown) failure testing method. Compared with physical testing method requiring expensive testing equipment, personnel and early-stage testing preparation and long time for testing, the simulation technique based method utilizing computer software for simulation calculation of semiconductor TDDB saves a great deal of time and cost. Therefore, at the initial design stage, the simulation technique of computers is used for analyzing failure simulation of the semiconductor TDDB and finding out loopholes in design, and plays an important role in improving reliability of a transistor even a whole semiconductor device.

Description

technical field [0001] The invention belongs to the technical field of failure testing, and relates to a semiconductor device TDDB failure testing method based on simulation technology. Background technique [0002] With the continuous reduction of the channel length of integrated circuits, the thickness of the gate oxide layer has also been scaled down. The thickness of the SiO2 insulating gate dielectric layer has been reduced from a few hundred nanometers 40 years ago to about 2.0nm now. The United States "National Semiconductor Technology Development Blueprint" pointed out that the thickness of the SiO2 dielectric layer will be reduced to less than 1.0nm by 2012, which has reached the size of the atomic scale. However, as the size of the device continues to shrink, the following problems arise: (1) the increase of the gate leakage current, as the thickness of the silicon dioxide film decreases, the gate leakage current will increase; (2) the impurity diffusion, the gate ...

Claims

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Application Information

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IPC IPC(8): G06F17/50
Inventor 张华
Owner CHINA AERO POLYTECH ESTAB
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