The Method of Restoring Medium K Value

A technology for repairing medium and K value, which is applied in the fields of electrical components, semiconductor/solid-state device manufacturing, circuits, etc. It can solve the problems of fragile media and achieve the effect of repairing K value

Active Publication Date: 2017-03-01
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a method for repairing the K value of the medium, which is used to solve the problem that the repair method in the prior art is easy to damage the medium

Method used

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  • The Method of Restoring Medium K Value
  • The Method of Restoring Medium K Value
  • The Method of Restoring Medium K Value

Examples

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Embodiment 1

[0039] see Figure 1 to Figure 5 , the present invention provides a kind of method for repairing medium K value, the method for described repairing medium K value at least comprises the following steps:

[0040] Step 1), first see the figure 1 , providing a substrate 1 on which a dielectric layer 2 is formed;

[0041] Specifically, the substrate 1 may be a conventional semiconductor substrate such as Si, Ge, SOI, etc., or may be a stacked structure including some devices. The dielectric layer 2 is a low-K medium. In this embodiment, the dielectric layer 2 is preferably a porous ultra-low-K medium; the porous ultra-low-K medium satisfies Kfigure 1 The diagram shows several holes 3 in the dielectric layer 2 . In this embodiment, the dielectric layer 2 is formed by firstly forming a dielectric film layer on the substrate 1 by chemical vapor deposition, and then forming a plurality of holes 3 in the dielectric film layer through porogen and ultraviolet light treatment. It shoul...

Embodiment 2

[0055] Embodiment 2 adopts basically the same solution as Embodiment 1, except that in Embodiment 2, a step of irradiating the dielectric layer with microwaves is also included after the polishing process in the subsequent process flow.

[0056] see Figure 6 to Figure 8 , the present invention provides a kind of method for repairing medium K value, the method for described repairing medium K value at least comprises the following steps:

[0057] Step 1), providing a substrate, and forming a dielectric layer on the substrate;

[0058] Step 2), etching a number of grooves in the dielectric layer, and cleaning to remove the etching residue;

[0059] In step 3), microwaves are used to irradiate the etched dielectric layer.

[0060] It should be pointed out that steps 1) to 3) in this example are the same as steps 1) to 3) in Example 1, and the specific process flow can refer to Example 1 Figure 1 to Figure 5 and related text descriptions, which will not be repeated here.

[...

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Abstract

The invention provides a method for restoration of a dielectric K value. The method at least includes the following steps: 1) providing a substrate and forming a dielectric layer on the substrate; 2) etching a plurality of grooves in the dielectric layer and cleaning and removing etching residues; 3) adopting microwaves to irradiate the dielectric layer which undergoes the etching. The method for restoration of the dielectric K value makes use of strong microwave-absorbing property of water to remove moisture in the dielectric layer so as to restore the K value of the dielectric layer; and that the energy gap of the dielectric layer is far larger than photon energy of the microwaves is used so that the microwaves are not absorbed and a problem of damage of the dielectric layer is prevented.

Description

technical field [0001] The invention belongs to the field of semiconductor manufacturing, and relates to a method for processing a dielectric layer, in particular to a method for restoring the K value of a dielectric. Background technique [0002] With the rapid development of integrated circuit CMOS technology in accordance with Moore's Law, interconnection delay gradually replaces device delay as a key factor affecting chip performance. The parasitic capacitance and interconnection resistance between the interconnections cause the transmission delay of the signal. Since copper has low resistivity, excellent anti-electromigration characteristics and high reliability, it can reduce the interconnection resistance of the metal, thereby reducing the overall interconnection delay effect, and has now changed from conventional aluminum interconnection to low Resistor copper interconnects. At the same time, reducing the capacitance between interconnections can also reduce the del...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768H01L21/3105
CPCH01L21/76825H01L21/76826
Inventor 王宗涛周鸣
Owner SEMICON MFG INT (SHANGHAI) CORP
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